A detailed investigation is performed to obtain optimized optical performance of polar III-nitride single quantum well (SQW) semiconductor lasers by band engineering through symmetric and asymmetric tuning of device parameters. Electronic, optical, and threshold characteristics are calculated to analyze the effects of band engineering on device performance. Here, the InN-In_0.25Ga_0.75 N SQW structure is chosen as a case study. This work shows a significant improvement in optical properties from higher wavefunction overlap integral obtained from band modification due to the tuning which also provides higher momentum matrix elements, spontaneous emission rate, and optical gain, as well. The maximum TE-polarized optical gain for the symmetric structure is found as around 6291 cm⁻¹ for 6 Å well width and 6 Å barrier width at 710 nm, while for asymmetric laser structure, a maximum TE-polarized optical gain of around 6225 cm⁻¹ at around 800 nm is observed for 6 Å well width with asymmetric barrier width of 6 Å and 8 Å. The optimization is carried out over 500–1600 nm wavelength range to obtain the optimum structure for maximum optical performance at different wavelengths. A time-efficient genetic algorithm-based optimization is also performed that provides the same optimization results in reduced time.

通过对器件参数进行对称和不对称调谐，通过波段工程技术进行了详细的研究，以获取极性III氮化物单量子阱（SQW）半导体激光器的优化光学性能。计算电子，光学和阈值特性以分析频带工程对设备性能的影响。在此，以InN-In _0.25 Ga _0.75  N SQW结构为例进行研究。这项工作表明，由于进行了调谐而获得了更高的波函数重叠积分，从而提高了波函数重叠积分，从而显着改善了光学性能，该调谐还提供了更高的动量矩阵元素，自发发射率和光学增益。发现对称结构的最大TE偏振光学增益约为6291 cm对于710 nm处的6Å阱宽度和6Å势垒宽度，^-1，而对于不对称激光结构，对于具有不对称势垒宽度的6Å阱宽度，在800 nm处观察到的最大TE偏振光增益约为6225 cm ^-1 6Å和8Å。在500–1600 nm波长范围内进行了优化，以获得在不同波长下具有最佳光学性能的最佳结构。还执行了基于时间高效的遗传算法的优化，可在减少的时间内提供相同的优化结果。