Ga_0.9Al_0.1FeO₃ and Ga_0.75Al_0.25FeO₃ samples were obtained using a solid-state reaction process. Phase analysis indicated that all samples are single phase having an orthorhombic structure. The effect of Al doping on the lattice parameters, the distortions in the tetrahedral and octahedral bond lengths and angles and cation distribution of different ions among the four crystallographic positions in GaFeO₃ (GFO) was studied in detail applying Rietveld structural analysis; Al ions substituted Ga mostly at the octahedral site G2 with a small fraction residing at the Fe1 and Fe2 sites. The sample morphology was investigated by high-resolution scanning electron microscopy and the corresponding energy-dispersive x-ray analysis manifested element percentages in accordance with intended values. The influence of the doping amount, the frequency and temperature on the dielectric properties, ac conductivity, complex impedance and complex electric modulus of GFO was also investigated. Nyquist plots for both samples at different temperatures were studied. The activation energy of doped samples is in agreement with the activation energies of double ionized oxygen vacancies; it increased as the amount of Al doping GFO matrix increased.

使用固态反应过程获得Ga _0.9 Al _0.1 FeO ₃和Ga _0.75 Al _0.25 FeO ₃样品。相分析表明，所有样品均为具有正交结构的单相。Al掺杂对GaFeO ₃四个晶体位置之间晶格参数，四面体和八面体键长的畸变，角度和不同离子的阳离子分布的影响（GFO）应用Rietveld结构分析进行了详细研究；Al离子主要在八面体G2处取代Ga，而一小部分位于Fe1和Fe2处。通过高分辨率扫描电子显微镜对样品的形态进行了研究，相应的能量分散x射线分析表明，元素百分数与预期值相符。研究了掺杂量，频率和温度对GFO介电性能，交流电导率，复阻抗和复电模量的影响。研究了两种样品在不同温度下的奈奎斯特图。掺杂样品的活化能与双电离氧空位的活化能一致。它随着Al掺杂GFO基体的增加而增加。