Manganese-doped nickel oxide nanosheet array films are successfully prepared on a nickel oxide seed-coated glass substrate by an immersion method. Various annealing temperatures between 300°C and 500°C are applied to the manganese-doped nickel oxide nanosheet array films to study their effect on the properties of nickel oxide, including humidity sensing performance. Field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), ultraviolet–visible (UV–vis) spectrophotometry, a two-probe current–voltage (I-V) measurement system and a humidity measurement system are used to characterise the heat-treated manganese-doped nickel oxide samples. The effect of annealing temperature can be clearly observed for the different surface morphologies and diffraction patterns. The samples exhibit average crystallite size increases of 0.63–10.13 nm with increasing annealing temperature. The dislocation density, interplanar spacing, lattice parameter, unit cell volume and stress/strain are also determined from the XRD data. The average transmittances in the visible region for all samples show low percentages with the highest transparency of 50.7% recorded for manganese-doped nickel oxide annealed at 500°C. The optical band gap shows a decreasing trend with increasing annealing temperature. The I-V measurement results reveal that manganese-doped nickel oxide displays improved conductivity values with increasing annealing temperature. The sensitivity of the humidity sensors shows an ascending curve with increasing temperature. The optimal device performance is obtained with annealing at 500°C, with the highest sensitivity of 270 and the fastest response and recovery times. In contrast, the sample for annealing at 300°C shows poor sensing performance.

通过浸没法在氧化镍种子涂覆的玻璃基板上成功制备了锰掺杂的氧化镍纳米片阵列膜。将300摄氏度至500摄氏度之间的各种退火温度应用于掺杂锰的氧化镍纳米片阵列膜，以研究其对氧化镍性能（包括湿度感应性能）的影响。场发射扫描电子显微镜（FESEM），能量色散X射线光谱（EDS），X射线衍射（XRD），紫外可见（UV-vis）分光光度法，两探针电流电压（I - V）测量系统和湿度测量系统用于表征经过热处理的掺杂锰的氧化镍样品。对于不同的表面形态和衍射图样，可以清楚地观察到退火温度的影响。随着退火温度的升高，样品的平均晶粒尺寸增加了0.63–10.13 nm。位错密度，晶面间距，晶格参数，晶胞体积和应力/应变也由XRD数据确定。所有样品在可见光区域的平均透射率均显示出较低的百分比，在500°C退火的锰掺杂氧化镍中记录的最高透明度为50.7％。随着退火温度的升高，光学带隙呈现出减小的趋势。在我- V测量结果表明，随着退火温度的升高，锰掺杂的氧化镍显示出更高的电导率值。湿度传感器的灵敏度随着温度的升高而呈上升曲线。在500°C的退火温度下可获得最佳的器件性能，最高灵敏度为270，响应和恢复时间最快。相反，在300°C退火的样品显示出较差的感测性能。