In the present work, we have successfully synthesized Bi₂S₃, CuS, and its heterojunction Bi₂S₃/CuS thin film on fluorine doped tin oxide (FTO) coated glass as counter electrodes. These depositions are done by simple, cost effective, and simply executable sequential chemical bath deposition (S-CBD) method. Well optimized preparative parameters led to the formation of good quality thin films of Bi₂S₃ and CuS films and heterojunction. The structural validation Bi₂S_3, CuS, and its heterojunction were achieved by X-ray diffraction and Raman scattering, surface morphological study observed through Scanning Electron Microscopy (SEM) and topology was confirmed by Atomic Force Microscopy (AFM). We have employed Bi₂S₃/CuS heterostructure as a counter electrode (CE) in dye-sensitized solar cell (DSSC). We have observed different parameters like short circuit current density (Jsc), open circuit voltage (Voc), Fill Factor (FF) and efficiency (n) by Current–voltage (J-V) characteristics. Though we do not achieve an anticipated outcome for heterostructure compared with conventional Platinum and Carbon black counter electrode, CuS separately found worthy as Counter electrode (CE) in DSSC.

中文翻译：

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化学合成的Bi2S3，CuS和Bi2S3 / CuS异质结构材料作为对电极：染料敏化太阳能电池的应用

在目前的工作中，我们已经成功地在掺氟氧化锡（FTO）涂层玻璃作为反电极上合成了Bi ₂ S ₃，CuS及其异质结Bi ₂ S ₃ / CuS薄膜。这些沉积是通过简单，经济高效且简单可执行的顺序化学浴沉积（S-CBD）方法完成的。良好优化的制备参数导致形成高质量的Bi ₂ S ₃和CuS薄膜以及异质结薄膜。结构验证Bi ₂ S ₃通过X射线衍射和拉曼散射获得CuS及其异质结，通过扫描电子显微镜（SEM）观察表面形态研究，并通过原子力显微镜（AFM）确认拓扑。我们已经采用Bi ₂ S ₃ / CuS异质结构作为染料敏化太阳能电池（DSSC）中的对电极（CE）。我们通过电流-电压（JV）特性观察到了不同的参数，例如短路电流密度（Jsc），开路电压（Voc），填充系数（FF）和效率（n）。尽管与传统的铂和炭黑对电极相比，我们无法获得预期的异质结构结果，但在DSSC中，CuS值得单独作为对电极（CE）使用。