A novel shorted anode lateral-insulated gate bipolar transistor (SA LIGBT) with snapback-free characteristic is proposed and investigated. The device features a controlled barrier V _barrier and resistance R _SA in anode, named CBR LIGBT. The electron barrier is formed by the P-float/N-buffer junction, while the anode resistance includes the polysilicon layer and N-float. At forward conduction stage, the V _barrier and R _SA can be increased by adjusting the doping of the P-float and polysilicon layer, respectively, which can suppress the unipolar mode to eliminate the snapback. At turn-off stage, the low-resistance extraction path (N-buffer/P-float/polysilicon layer/N-float) can quickly extract the electrons in the N-drift, which can effectively accelerate the turn-off speed of the device. The simulation results show that at the same V _on of 1.3 V, the E _off of the CBR LIGBT is reduced by 85%, 73%, and 59.6% compared with the SSA LIGBT, conventional LIGBT, and TSA LIGBT, respectively. Additionally, at the same E _off of 1.5 mJ/cm², the CBR LIGBT achieves the lowest V _on of 1.1 V compared with the other LIGBTs.

提出并研究了一种具有无回弹特性的新型短路阳极横向绝缘栅双极晶体管（SA LIGBT）。该器件在阳极具有受控势垒V _势垒和电阻R _SA，命名为 CBR LIGBT。电子势垒由 P-float/N-buffer 结形成，而阳极电阻包括多晶硅层和 N-float。在正向导通阶段，V _势垒和R _SA可以通过分别调整P-float和多晶硅层的掺杂来增加，这可以抑制单极模式以消除snapback。在关断阶段，低阻提取路径（N-buffer/P-float/polysilicon layer/N-float）可以快速提取N-drift中的电子，可以有效加快关断速度设备。仿真结果表明，在相同的 1.3 V V _{on下，CBR LIGBT 的}E _off与 SSA LIGBT、传统 LIGBT 和 TSA LIGBT 相比分别降低了 85%、73% 和 59.6%。此外，在相同的E _off为 1.5 mJ/cm ²时，CBR LIGBT 实现了最低的V _on1.1 V 与其他 LIGBT 相比。