Pulsed radiative characteristics of high-power semiconductor lasers based on an asymmetric InGaAs/AlGaAs/GaAs heterostructure with an active region including two quantum wells and a gradient waveguide on the side of the p-emitter are studied. It is shown that the use of the proposed design allows efficient laser operation under pumping by 100-ns current pulses in the temperature range 25 – 90 C. The lasers with a Fabry – Perot cavity 2900 μm long demonstrated peak powers of 62 W (injection current 123 A) and 43 W (122 A) at temperatures of 25 and 90 C, respectively. It is found that at room temperature and currents of ∼50A, a decrease in the cavity length to 600 μm does not cause a decrease in the output power with respect to the power of lasers with a long (2900 μm) cavity. An increase in temperature to 90 C at high injection currents leads to a sharp decrease in the radiative efficiency of lasers with a short (600 μm) cavity and to the change of their operation regime to the two-band lasing.

研究了基于非对称 InGaAs/AlGaAs/GaAs 异质结构的高功率半导体激光器的脉冲辐射特性，该异质结构具有包括两个量子阱和在 p 发射器侧的梯度波导的有源区。结果表明，使用所提出的设计允许在 25 - 90 C 的温度范围内通过 100 ns 电流脉冲在泵浦下进行有效的激光器操作。具有 2900 μm 长的法布里-珀罗腔的激光器显示出 62 W 的峰值功率（注入电流 123 A) 和 43 W (122 A)，温度分别为 25 和 90 C。发现在室温和约 50A 的电流下，腔长度减小到 600 μm 不会导致输出功率相对于具有长（2900 μm）腔的激光器的功率降低。