Semiconductor lasers based on AlGaInAs/InP heterostructures with a strongly asymmetric waveguide are studied. It is shown that the use of such a waveguide simultaneously with an increased quantum well energy depth provides conditions for increasing the output laser power. The semiconductor AlGaInAs/InP lasers based on a strongly asymmetric waveguide with a stripe contact width of 100 μm demonstrated an output optical power of 5 W (pump current 11.5 A) in a continuous-wave regime and 19 W (100 A) in a pulsed regime (100 ns, 1 kHz) at a wavelength of 1450 – 1500 nm at room temperature. The obtained data are compared with the output characteristics of lasers based on a symmetric waveguide.

研究了基于具有强不对称波导的 AlGaInAs/InP 异质结构的半导体激光器。结果表明，在增加量子阱能量深度的同时使用这种波导为增加输出激光功率提供了条件。基于条状接触宽度为 100 μm 的强不对称波导的半导体 AlGaInAs/InP 激光器在连续波状态下的输出光功率为 5 W（泵电流 11.5 A），在脉冲状态下输出光功率为 19 W（100 A）在室温下，波长为 1450 – 1500 nm 的区域（100 ns，1 kHz）。将获得的数据与基于对称波导的激光器的输出特性进行比较。