The possibility of amplifying a THz hybrid surface plasmon in a structure with an Hg_0.82Cd_0.18Te epitaxial film grown on a GaAs substrate and covered with a metal layer is investigated. It is shown that for a film thickness of 100 nm and a temperature of 80 K, the hybrid surface plasmon mode gain can be greater than external losses at a pump radiation intensity with a wavelength of 2.3 μm, exceeding 850 kW cm⁻². Additional doping of the Hg_0.82Cd_0.18Te layer with a donor impurity having a concentration of 4 10¹⁷ cm⁻³ will lead to a 1.5-fold decrease in the threshold pump intensity.

中文翻译：

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在基于 HgCdTe 的结构中的混合表面等离子体上产生太赫兹激光

研究了在具有生长在 GaAs 衬底上并覆盖有金属层的 Hg _0.82 Cd _0.18 Te 外延膜的结构中放大 THz 混合表面等离子体的可能性。结果表明，对于 100 nm 的薄膜厚度和 80 K 的温度，混合表面等离子体模式增益可以大于在波长为 2.3 μm 的泵浦辐射强度下的外部损耗，超过 850 kW cm ^-2。用浓度为4 10 ¹⁷ cm ^-3的施主杂质额外掺杂Hg _0.82 Cd _0.18 Te层将导致阈值泵浦强度降低1.5倍。