Abstract

A nitride GaAs Schottky diode have been fabricated by nitridation of GaAs substrates with thickness 0.7 nm of GaN layer. The capacitance–voltage C(V) and conductance–voltage G/ω versus V of the Au|GaN|GaAs structures were investigated at room temperature for different frequencies ranging between 1 kHz and 1 MHz. The measurements of C(V) and G/ω versus V of the Au|GaN|GaAs Schottky diode were found to be strongly dependent on bias voltage and frequency. The capacitance and conductance increased significantly with decreasing of the frequency, indicating the presence of continuous interface state density behavior. The series resistance R_s(V) plot gives a peak, decreasing with increasing frequencies and almost constant for high frequency. The device parameters such as doping concentration, interface capacitance, the barrier height, and series resistance were calculated using C(V) and G(V) characteristics, and were found to be 1.3 × 10¹⁶ cm^–3, 3 × 10^–7 F, 1.8 eV, and 47 Ω, respectively. The frequency dependency of the interface states density was calculated using Hill–Coleman’s technique and it has been shown that the interface states density exponentially decreases with increasing frequency from 10¹⁶ eV^–1 cm^–2 for 1 kHz to 10¹³ eV^–1 cm^–2 for 1 MHz.

中文翻译：

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氮化镓GaAs肖特基二极管的频率相关电容和电导-电压特性

摘要

通过氮化厚度为0.7 nm的GaN层的GaAs衬底，可以制造氮化物GaAs肖特基二极管。在室温下，针对频率范围为1 kHz到1 MHz的Au | GaN | GaAs结构，研究了电容电压C（V）和电导电压G /ω与V的关系。的测量Ç（V）和G ^ /ω与V发现Au | GaN | GaAs肖特基二极管的制造强烈依赖于偏置电压和频率。电容和电导随频率的降低而显着增加，表明存在连续的界面态密度行为。串联电阻R _s（V）曲线给出一个峰值，随着频率的增加而减小，而对于高频则几乎恒定。利用C（V）和G（V）特性计算了诸如掺杂浓度，界面电容，势垒高度和串联电阻等器件参数，结果为1.3×10 ¹⁶ cm ^-3，3 ×10 ^-7F，1.8 eV和47Ω。使用Hill–Coleman技术计算了界面态密度的频率相关性，结果表明，界面态密度随频率的增加从1 kHz的10 ¹⁶ eV ^–1 cm ^–2到10 ¹³ eV ^–1 cm ^–呈指数下降^{。 2}为1兆赫。