Abstract

The effect of the Gd concentration on the temperature and pressure coefficients of the resistance of thin polycrystalline films of Sm_{1 – x}Gd_xS solid solutions, where x = 0, 0.05, 0.1, 0.2, 0.33, and 0.5 is studied. The films are grown by explosive evaporation in vacuum of powders of the initial compounds and sedimentation of the latter from the gas phase onto glass substrates. The dependences of the temperature α and pressure β coefficients of the resistance are determined, as well as their ratios γ on the Gd concentration x in the system of SmS–GdS solid solutions, based on which the optimum compositions for fabricating thin-film piezoresistors and baroresistors are determined.

中文翻译：

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基于Sm 1 – x Gd x S固体溶液的薄膜压敏电阻

摘要

研究了Gd浓度对Sm _{1 – x} Gd _x S固溶体薄膜的电阻温度和压力系数的影响，其中x = 0、0.05、0.1、0.2、0.33和0.5。通过在真空中爆炸初始化合物的粉末，然后将其从气相沉降到玻璃基板上，使薄膜生长。确定了电阻的温度系数α和压力系数β以及它们与γ的比值对SmS–GdS固溶体系统中Gd浓度x的依赖关系，在此基础上，可以制造薄膜压电电阻器和压敏电阻确定。