Abstract

In this study, we investigated the Cu-doped ZnO (CZO) structure. This structure was deposited on the Si and glass substrates using the RF magnetron sputtering technique. Morphological and structural features of CZO thin films (CZOs), as-deposited and annealed at temperatures of 200, 400, and 600°C, were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), as well as atomic force microscopy (AFM). CZO film annealed at temperature of 600°C has a sharp peak, good homogeneity, and low surface roughness compared to others. Electrical properties of the MOS structures, which are of CZO interlayer, deposited on n-Si substrate, were characterized by I(V) measurement at room temperature. The fundamental electrical parameters were calculated by analyzing the forward-bias I(V) curves at room temperature. The series resistance R_s values of the device were also determined using thermionic emission theory and Cheung and Cheung methods. According to experimental results, Au|CZO|n-Si MOS structure annealed at 600°C has low R_s values compared to other investigated MOS structures in the present study. As a result, it was found that CZO structure annealed at 600°C is suitable for innovative and state-of-the-art electronic and optoelectronic device applications.

中文翻译：

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退火对射频磁控溅射制备的CZO结构的表面形貌和电流-电压特性的影响

摘要

在这项研究中，我们研究了掺杂铜的ZnO（CZO）结构。使用射频磁控溅射技术将该结构沉积在Si和玻璃基板上。通过X射线衍射（XRD），扫描电子显微镜（SEM）以及在200、400和600°C的温度下沉积并退火的CZO薄膜（CZO）的形貌和结构特征原子力显微镜（AFM）。与其他相比，在600°C的温度下退火的CZO膜具有尖锐的峰值，良好的均匀性和较低的表面粗糙度。沉积在n -Si衬底上的CZO中间层MOS结构的电学特性用I（V）在室温下测量。基本电参数是通过分析室温下的前向偏置电流I（V）曲线来计算的。器件的串联电阻R _s值也使用热电子发射理论以及Cheung和Cheung方法确定。根据实验结果，Au | CZO | 与本研究中其他研究过的MOS结构相比，在600°C退火的n -Si MOS结构具有较低的R _s值。结果，发现在600℃下退火的CZO结构适合于创新的和最先进的电子和光电设备应用。