当前位置: X-MOL 学术Semiconductors › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Local Structure and Anti-Structural Defects of Tin in Amorphous and Crystalline Ge 2 Sb 2 Te 5 Films
Semiconductors ( IF 0.6 ) Pub Date : 2021-02-03 , DOI: 10.1134/s1063782621010127
A. V. Marchenko , E. I. Terukov , F. S. Nasredinov , Yu. A. Petrushin , P. P. Seregin

Abstract

The absorption Mössbauer spectroscopy on 119Sn impurity centers shows that germanium atoms in the structure of amorphous and polycrystalline Ge2Sb2Te5 films have different local symmetries (tetrahedral in the amorphous phase and octahedral in the crystalline). By emission Mössbauer spectroscopy on 119mSn impurity centers formed after the radioactive decay of 119Sb or 119mTe parent atoms, tin antisite defects at antimony and tellurium sites of crystalline Ge2Sb2Te5 films are identified.



中文翻译:

非晶和结晶Ge 2 Sb 2 Te 5薄膜中锡的局部结构和抗结构缺陷

摘要

119 Sn杂质中心的吸收Mössbauer光谱表明,非晶和多晶Ge 2 Sb 2 Te 5薄膜结构中的锗原子具有不同的局部对称性(非晶相中的四面体和晶体中的八面体)。通过对119 Sb或119 m Te母原子的放射性衰变后形成的119 m Sn杂质中心进行发射Mössbauer光谱分析,鉴定出晶体Ge 2 Sb 2 Te 5膜的锑和碲位点处的锡反位缺陷。

更新日期:2021-02-03
down
wechat
bug