Abstract

The purpose of the study is to investigate the effect of a new type of compliant substrates based on an AlGaAs superstructure layer (SL) and a protoporous Si (proto-Si) layer formed on a crystalline Si (c-Si) layer on the optical properties of an epitaxial GaAs layer grown by metal–organic chemical vapor deposition. It is for the first time shown that the low-temperature growth of high-quality epitaxial GaAs films can be conducted using SL/proto-Si compliant substrates. The introduction of a SL layer in addition to proto-Si into the composition of the compliant substrate makes it possible to mitigate a number of negative effects of low-temperature growth, to reduce the level of strains in the epitaxial layer, to protect it from self-doping with Si atoms, to reduce the number of technological operations of the growth of transition buffer layers, to improve the structural and morphological characteristics of the epitaxial layer, and to attain good optical characteristics of the layer. The GaAs/Si heterostructures are studied by Raman spectroscopy, photoluminescence measurements, and optical transmission–reflection spectroscopy. The data will serve as an important material for understanding the fundamentals of the physics and technology of integrated III–V/Si heterostructures and for facilitating their use in optoelectronic devices.

中文翻译：

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GaAs / Si集成异质结构的光谱学研究

摘要

该研究的目的是研究基于AlGaAs超结构层（SL）和在晶体Si（c上形成的原硅（proto-Si）层）的新型顺应性基板的影响-Si）层通过金属有机化学气相沉积生长的外延GaAs层的光学特性。首次显示可以使用SL / proto-Si兼容衬底进行高质量外延GaAs薄膜的低温生长。除了将原硅之外的SL层引入到顺应性衬底的成分中，还可以减轻低温生长的许多负面影响，减少外延层中的应变水平，保护其免受外来层的影响。自掺杂硅原子，以减少过渡缓冲层生长的技术操作次数，改善外延层的结构和形态特征，并获得良好的光学特性。通过拉曼光谱研究了GaAs / Si异质结构，光致发光测量和光透射反射光谱学。数据将成为了解集成的III–V / Si异质结构的物理和技术基础以及促进其在光电设备中使用的重要材料。