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Mechanism of the Generation of the Critical Current in High-Temperature Superconductors with Through Microdefects
Physics of the Solid State ( IF 0.9 ) Pub Date : 2021-02-03 , DOI: 10.1134/s1063783421010145
A. N. Maksimova , V. A. Kashurnikov , A. N. Moroz , I. A. Rudnev

Abstract

The critical current of a model high-temperature superconductor (HTSC) with defects in the form of through holes (antidots) with characteristic sizes on the order of the magnetic-field penetration depth (or larger) is calculated. To this end, subprocesses equivalent to the magnetic-flux trapping by a hole and creation of a vortex near the hole edge are introduced into the model of a layered HTSC. It is shown that account for these subprocesses yields a physical mechanism, which makes it possible to describe correctly the nonmonotonic dependence of the critical current on the antidot characteristic size, which is similar to the experimental one. The calculations are carried out for a pure superconductor and a superconductor with nanoscale pinning centers. It is shown that the presence of nanoscale pinning centers along with antidots does not make qualitative changes in the relationship between the antidot radius and magnetic-flux pinning character and the critical-current behavior in an HTSC.



中文翻译:

具有微缺陷的高温超导体中临界电流的产生机理

摘要

计算出具有通孔(解毒剂)形式缺陷的模型高温超导体(HTSC)的临界电流,其特征尺寸约为磁场穿透深度(或更大)。为此,将等效于通过孔捕获磁通量和在孔边缘附近产生涡流的子过程引入到分层HTSC模型中。结果表明,考虑这些子过程会产生一种物理机制,这使得可以正确地描述临界电流对解毒点特征尺寸的非单调依赖性,这与实验结果类似。对纯超导体和具有纳米级钉扎中心的超导体进行计算。

更新日期:2021-02-03
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