Here we report the ZrO_x-based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V V_GS range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrO_x/TaN capacitors is proposed to be originated from the oxygen vacancy dipoles. The NC effect of the amorphous HfO₂ and ZrO_x films devices can be proved by the sudden drop of gate leakage, the negative differential resistance (NDR) phenomenon, the enhancement of IDS and sub-60 subthreshold swing. 5 nm ZrO_x-based NCFETs achieve a clockwise hysteresis of 0.24 V, lower than 60 mV/decade SS and an 12% IDS enhancement compared to the control device without ZrO_x. The suppressed NC effect of Al₂O₃/HfO₂ NCFET compared with ZrO_x NCFET is related to the partial switching of oxygen vacancy dipoles in the forward sweeping due to negative interfacial dipoles at the Al₂O₃/HfO₂ interface.

在这里，我们报告基于ZrO _x的负电容（NC）FET在±1 V V _GS范围内具有45.06 mV /十年的亚阈值摆幅（SS），这将为将来的电压可缩放NCFET应用带来新的机遇。Ge / ZrO _x / TaN电容器的铁电行为被认为是由氧空位偶极子引起的。无定形的HfO的NC效果₂和ZrO _X膜设备可以由栅极泄漏的突然下降，负微分电阻（NDR）现象，增强证明我DS和子60亚阈值摆幅。5纳米ZrO _x与没有ZrO _x的控制设备相比，基于NCFET的NCFET的顺时针磁滞为0.24 V，低于60 mV /十倍SS，并且I DS增强了12％。与ZrO _x NCFET相比，Al ₂ O ₃ / HfO ₂ NCFET的抑制NC效应与由于Al ₂ O ₃ / HfO ₂界面处的负界面偶极子引起的正向扫荡中氧空位偶极子的部分切换有关。