The effects of substrate temperature on the structural, morphological and luminescent properties of YVO₄:Eu³⁺ phosphor thin films were investigated using X-ray diffraction, field emission scanning electron microscopy, photoluminescence spectrometry and ultraviolet–visible spectrophotometry. YVO₄:Eu³⁺ thin films were grown on glass substrates using a radio-frequency magnetron sputtering technique at varying substrate temperatures of 25–400 °C. All thin films exhibited a strongly (200) preferred orientation. The optical transmittance spectra indicated an average transmittance higher than 86.5% in the range of 400–1100 nm. Regardless of the substrate temperature, five emission bands centered at 542, 598, 622, 656 and 705 nm, respectively, were observed for all thin films. The maximum excitation and emission spectra were observed at a substrate temperature of 400 °C. A red shift of the band gap energy was observed with increasing substrate temperature. The intensity of the red emission from ⁵D₀ → ⁷F₂ (622 nm) electric dipole transition was stronger than that of the orange emission due to ⁵D₀ → ⁷F₁ (598 nm) magnetic dipole transition, which indicates the presence of more Eu³⁺ ions in sites without inversion symmetry. Therefore, substrate temperature plays an important role in the growth of red-emitting YVO₄:Eu³⁺ thin films for solid-state lighting and electroluminescent devices.

使用X射线衍射，场发射扫描电子显微镜，光致发光光谱和紫外可见分光光度法研究了衬底温度对YVO ₄：Eu ³⁺荧光粉薄膜的结构，形态和发光性能的影响。YVO ₄：Eu ³⁺在25-400°C的不同基板温度下，使用射频磁控溅射技术在玻璃基板上生长薄膜。所有薄膜均表现出强烈的（200）优先取向。光学透射光谱表明，在400–1100 nm范围内，平均透射率高于86.5％。无论基板温度如何，所有薄膜均观察到五个分别位于542、598、622、656和705 nm处的发射带。在衬底温度为400°C时观察到最大激发和发射光谱。随着衬底温度的升高，观察到带隙能量的红移。从⁵ D ₀  →  ⁷ F ₂发出的红色光的强度由于⁵ D ₀  →  ⁷ F ₁（598 nm）磁偶极跃迁，（622 nm）电偶极跃迁比橙色发射的电偶极跃迁强，这表明在没有反对称性的位点中存在更多Eu ³⁺离子。因此，衬底温度在用于固态照明和电致发光器件的发红光的YVO ₄：Eu ³⁺薄膜的生长中起着重要作用。