Phase-shifting electron holography (PS-EH) is an interference transmission electron microscopy technique that accurately visualizes potential distributions in functional materials, such as semiconductors. In this paper, we briefly introduce the features of the PS-EH that overcome some of the issues facing the conventional EH based on Fourier transformation. Then, we present a high-precision PS-EH technique with multiple electron biprisms and a sample preparation technique using a cryo-focused-ion-beam, which are important techniques for the accurate phase measurement of semiconductors. We present several applications of PS-EH to demonstrate the potential in organic and inorganic semiconductors and then discuss the differences by comparing them with previous reports on the conventional EH. We show that in situ biasing PS-EH was able to observe not only electric potential distribution but also electric field and charge density at a GaAs p-n junction and clarify how local band structures, depletion layer widths, and space charges changed depending on the biasing conditions. Moreover, the PS-EH clearly visualized the local potential distributions of two-dimensional electron gas (2DEG) layers formed at AlGaN/GaN interfaces with different Al compositions. We also report the results of our PS-EH application for organic electroluminescence (OEL) multilayers and point out the significant potential changes in the layers. The proposed PS-EH enables more precise phase measurement compared to the conventional EH, and our findings introduced in this paper will contribute to the future research and development of high-performance semiconductor materials and devices.

中文翻译：

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用于精确测量有机和无机半导体中电位分布的相移电子全息术

相移电子全息术 (PS-EH) 是一种干涉透射电子显微镜技术，可准确显示功能材料（如半导体）中的电位分布。在本文中，我们简要介绍了 PS-EH 的特性，这些特性克服了基于傅立叶变换的传统 EH 所面临的一些问题。然后，我们提出了一种具有多电子双棱镜的高精度 PS-EH 技术和一种使用低温聚焦离子束的样品制备技术，它们是半导体精确相位测量的重要技术。我们介绍了 PS-EH 的几种应用，以证明在有机和无机半导体中的潜力，然后通过将它们与之前关于传统 EH 的报告进行比较来讨论差异。我们表明，原位偏置 PS-EH 不仅能够观察 GaAs pn 结处的电位分布，还能够观察电场和电荷密度，并阐明局部能带结构、耗尽层宽度和空间电荷如何根据偏置条件而变化. 此外，PS-EH 清楚地显示了在具有不同 Al 成分的 AlGaN/GaN 界面上形成的二维电子气 (2DEG) 层的局部电位分布。我们还报告了我们在有机电致发光 (OEL) 多层膜中应用 PS-EH 的结果，并指出了这些层的显着潜在变化。与传统 EH 相比，所提出的 PS-EH 能够实现更精确的相位测量，