Hafnium Oxide‐Based Ferroelectric Devices for Computing‐in‐Memory Applications,Physica Status Solidi (A) - Applications and Materials Science

当前位置： X-MOL 学术 › Phys. Status Solidi A › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Hafnium Oxide‐Based Ferroelectric Devices for Computing‐in‐Memory Applications
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-02-01 , DOI: 10.1002/pssa.202000635
Pei-Yao Chen ₁ , Zheng-Yu He ₁ , Ming-Yang Cha ₁ , Hao Liu ₁ , Hao Zhu ₁ , Lin Chen ₁ , Qing-Qing Sun ₁ , Shi-Jin Ding ₁ , David Wei Zhang ₁

Affiliation

Herein, a layer of 10 nm ferroelectric Al‐doped HfO₂ (HAO) film is fabricated and optimized and is further integrated in a nonvolatile memory device with TiN/HAO/Pt/Ti capacitor structure. Long retention, high endurance, and stable storage characteristics, as well as a competitive residual polarization of 2Pr = 24–30 μC cm⁻² are achieved. Furthermore, computing‐in‐memory applications are implemented utilizing the HAO‐based ferroelectric memory devices. Typical NOR and NOT logic gates are obtained based on the memristor‐aided logic (MAGIC) operations by exploiting the polarization inversion characteristics of the device, which show great potential in realizing other basic Boolean logic operations. The results show that the HAO‐based ferroelectric memory device is a strong candidate in the pursuit of next‐generation parallel storage and computing systems.

中文翻译：

用于存储计算应用的基于氧化for的铁电器件

本文中，制造并优化了10 nm铁电掺Al HfO ₂（HAO）膜层，并将其进一步集成到具有TiN / HAO / Pt / Ti电容器结构的非易失性存储器件中。长期保留，高耐久性和稳定的存储特性，以及2Pr = 24–30μCcm ^-2的竞争残留极化实现。此外，利用基于HAO的铁电存储设备来实现内存计算应用程序。通过利用器件的极化反转特性，可基于忆阻器辅助逻辑（MAGIC）操作获得典型的NOR和NOT逻辑门，这在实现其他基本布尔逻辑操作方面具有巨大潜力。结果表明，基于HAO的铁电存储设备是追求下一代并行存储和计算系统的强大候选者。

更新日期：2021-02-01

点击分享查看原文

点击收藏

阅读更多本刊最新论文