ZnS thin films have been successfully deposited using metal organic compound with ultra-low-temperature atomic layer deposition (ULT-ALD) at 80 °C. This plasma-free ULT-ALD eliminates the damage to the HgCdTe surfaces due to plasma and high temperature. The capacitance–voltage characteristics of metal–insulator–semiconductor (MIS) structures based on HgCdTe with traditional CdTe/ZnS and ULT-ALD ZnS passivation are studied. The fixed charge surface density at the interface of MIS structures passivated by ALD ZnS was −6.40 × 10¹¹ cm⁻², Lower than the value of double-layer passivation 4.20 × 10¹² cm⁻², and the density of slow states is 5.94 × 10¹¹ cm⁻³ and 2.61 × 10¹² cm⁻³ respectively. The hysteresis of the MIS structure with ALD ZnS passivation is almost unchanged with temperature. From these findings, combined with characteristics of high density and conformality of ALD films, we conclude that ALD ZnS has better electrical properties than traditional double layer passivation provides significantly improved interface quality, but obtained density of fixed charge is still quite high and should be further reduced.

ZnS薄膜已成功地使用金属有机化合物在80°C下进行了超低温原子层沉积（ULT-ALD）。这种无等离子体的ULT-ALD消除了等离子体和高温对HgCdTe表面的损害。研究了基于HgCdTe和传统CdTe / ZnS和ULT-ALD ZnS钝化的金属-绝缘体-半导体（MIS）结构的电容-电压特性。ALD ZnS钝化的MIS结构界面处的固定电荷表面密度为-6.40×10 ¹¹ cm ^-2，低于双层钝化值4.20×10 ¹² cm ^-2，慢态密度为5.94 ×10 ¹¹厘米^-3和2.61×10 ¹²cm ^-3分别。带有ALD ZnS钝化的MIS结构的磁滞随温度几乎不变。从这些发现，结合ALD膜的高密度和保形性的特征，我们得出结论：ALD ZnS具有比传统双层钝化更好的电性能，可显着改善界面质量，但获得的固定电荷密度仍然很高，应进一步提高。减少。