Effects of selective carbon (C) incorporation in silicon (Si) quasi-read-avalanche-transit-time (QRATT) devices are studied through indigenously developed non-linear Strain-corrected-mixed-quantum-tunneling-drift–diffusion-model (SMQTDDM). A superlattice with alternate thin films of strained-Si and comparatively thick layers of Si_0.99C_0.01 stressors constitutes the active region. Out-of-plane mobility enhancement occurs due to the in-plane biaxial strain at Si/Si_0.99C_0.01 interfaces. Band offset between Si/Si_0.99C_0.01results in high injection velocity. Combined effect of strain-engineering and band offset amounts to the application of periodic accelerating pulse along the active region. This subsequently reduces carrier transit-time and results in THz oscillation in Si-ATT-diode. Remarkable RF performance (RF-power ~ \(23.2\times {10}^{8}\) W/m² at 0.73 THz) of exotic Si-QRATT-devices is reported for the first time. The simulation incorporates quantum-effects, process-induced-strain, parasitic-resistance, thermal-model and inter-sub-band-tunneling in the dispersion relation of the multiple-quantum-wells through a combined solution of Schrodinger–Poisson equations. The theoretical analysis is verified with experimental observations for in-house-fabricated Si-ATT-diodes. QRATT-device-based THz series-shunt switches are further explored.

通过本地开发的非线性应变校正混合量子隧穿漂移扩散模型研究了选择性碳（C）掺入硅（Si）准读取雪崩瞬态时间（QRATT）装置的影响（ SMQTDDM）。具有交替应变硅薄膜和相对较厚的Si _0.99 C _0.01应力源层的超晶格构成了有源区。由于Si / Si _0.99 C _0.01界面处的面内双轴应变，导致面外迁移率提高。Si / Si之间的带_隙0.99 C _0.01导致高注射速度。应变工程和带偏移的共同作用等于沿着有源区域施加周期性的加速脉冲。随后减少了载流子的传输时间，并导致Si-ATT二极管中的THz振荡。出色的RF性能（RF功率〜  \（23.2 \ times {10} ^ {8} \） W / m ²在0.73 THz频率下）首次报道了奇异的Si-QRATT器件。该模拟通过Schrodinger-Poisson方程的组合解法将量子效应，过程感应应变，寄生电阻，热模型和子带间隧穿纳入多量子阱的色散关系中。对于室内制造的Si-ATT-二极管，通过实验观察证实了理论分析。基于QRATT器件的THz串联分流开关得到了进一步探索。