Perovskite/Silicon‐Nanowire‐Based Hybrid Heterojunctions for Fast and Broadband Photodetectors,Physica Status Solidi-Rapid Research Letters

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Perovskite/Silicon‐Nanowire‐Based Hybrid Heterojunctions for Fast and Broadband Photodetectors
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-02-01 , DOI: 10.1002/pssr.202000537
Ivy M. Asuo _{1,

2} , Debika Banerjee ₂ , Alain Pignolet ₁ , Riad Nechache ₁ , Sylvain G. Cloutier ₂

Affiliation

A hybrid photodetector fabricated with a halide perovskite and silicon nanowire (SiNW) heterojunction for broadband detection ranging from near‐ultraviolet to near‐infrared is reported. The device fabrication is conducted by directly coating chemically etched vertical SiNW arrays with perovskite thin films and nanofibers produced from liquid precursors. The optimized perovskite thin film/SiNW heterojunction‐based device under 532 nm illumination exhibits excellent spectral responsivity of 13 A W⁻¹, high specific detectivity reaching 10¹³ Jones at 0.3 V external bias, and fast rise/fall times of 22.2/17.6 μs. The device shows very good stability under ambient conditions, even after 30 days of storage. Overall, this simple, all‐solution‐based hybrid photodetector offers great potential for the future integrated optoelectronic devices.

中文翻译：

基于钙钛矿/硅纳米线的混合异质结，用于快速和宽带光电探测器

据报道，用卤化钙钛矿和硅纳米线（SiNW）异质结制造的混合光电探测器可用于从近紫外到近红外的宽带检测。通过用钙钛矿薄膜和由液态前驱物生产的纳米纤维直接涂覆化学蚀刻的垂直SiNW阵列来进行器件制造。经过优化的钙钛矿薄膜/ SiNW异质结基器件在532 nm照明下显示出13 A W ^-1的出色光谱响应度，高达10 ^13的高比探测率琼斯在0.3 V外部偏置下的快速上升/下降时间为22.2 / 17.6μs。即使在存放30天后，该设备在环境条件下也显示出非常好的稳定性。总体而言，这种简单的，基于解决方案的混合型光电探测器为未来的集成光电设备提供了巨大的潜力。

更新日期：2021-04-08

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