In this study, the thermoluminescence characteristics of CaF₂:Mn chips exposed to environmental-like doses are examined. Thermoluminescence measurements, at different doses (0.04–7.2 mGy) and heating rates (1–25 °C/s), were carried out. The sample's glow curves were analyzed using glow curve deconvolution (GCD), whole glow peak (WGP) and initial rise (IR) methods. The glow curves of the chips, readout at 5^oCs⁻¹, exhibited one peak around 306 °C. The integrated intensity of the peak increased linearly with dose. The peak exhibits thermal quenching with activation energy of thermal quenching of 0.65 eV. The mean activation energy of the peak from using IR, WGP and VHR methods are 1.22 ± 0.08, 1.14 ± 0.12 and 1.46 eV respectively. GCD, however, indicated the presence of five peaks in the sample's glow curve. Data from this study are compared with those reported for the sample exposed to high doses and discussed.

在这项研究中，研究了暴露于类环境剂量的CaF ₂：Mn芯片的热致发光特性。进行了不同剂量（0.04–7.2 mGy）和升温速率（1–25°C / s）的热致发光测量。使用辉光曲线反褶积（GCD），整个辉光峰（WGP）和初始上升（IR）方法分析了样品的辉光曲线。芯片的辉光曲线，读数为5 ^o Cs ^-1，在306°C附近出现一个峰。峰的积分强度随剂量线性增加。该峰表现出热猝灭，而热猝灭的活化能为0.65eV。使用IR，WGP和VHR方法得到的峰的平均活化能分别为1.22±0.08、1.14±0.12和1.46 eV。但是，GCD表示样品的辉光曲线中存在五个峰。将本研究的数据与报告的高剂量样品的数据进行比较并进行讨论。