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Elastic phonon dephasing effect on spin transport in 2D hexagonal lattice topological insulator
Micro and Nanostructures ( IF 2.7 ) Pub Date : 2021-01-31 , DOI: 10.1016/j.spmi.2021.106817
Md. Istiaque Rahaman , Mahbub Alam

2D hexagonal lattice Topological Insulator (TI) shows topologically protected spin polarized edge transport while the bulk of the material remains insulating. The suppression of backscattering of electrons makes the edge transport of electrons robust against any perturbation. Elastic phonon dephasing represents a generalized scattering and dephasing mechanism. In this work, we have illustrated the effect of elastic phonon dephasing on the transport of electron in 2D hexagonal lattice TI using Non Equilibrium Green's Function (NEGF) formalism. The transmission was found to be unity (1) and the phase of the electron remained coherent even after strong phonon dephasing. The results of this paper indicate the suitability of TI in future dissipationless coherent nanoelectronic devices.



中文翻译:

弹性声子相移对二维六边形格子拓扑绝缘子中自旋输运的影响

2D六边形晶格拓扑绝缘体(TI)显示拓扑受保护的自旋极化边缘传输,而大部分材料仍保持绝缘。电子反向散射的抑制使电子的边缘传输对任何扰动都具有鲁棒性。弹性声子相移代表了一种广义的散射和相移机制。在这项工作中,我们使用非平衡格林函数(NEGF)形式论证了弹性声子移相对二维六角形晶格TI中电子传输的影响。发现该传输是统一的(1),并且即使在强声子移相之后,电子的相仍保持相干。本文的结果表明TI在未来的无耗散相干纳米电子器件中的适用性。

更新日期:2021-03-04
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