Abstract

The GaAs layer turn on Ge at a right angle in the substrate plane was studied by high-energy electron diffraction and transmission electron microscopy methods when growing GaAs/Ge/GaAs heterostructures using individual molecular-beam epitaxy systems for GaAs and Ge, with sample transfer through atmosphere.

中文翻译：

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旋转GaAs层的GaAs / Ge / GaAs异质结构中的扩展缺陷

摘要

利用高能电子衍射和透射电子显微镜方法研究了GaAs / Ge / GaAs异质结构在GaAs和Ge的单个分子束外延体系下生长并进行样品转移的情况下，GaAs层在衬底平面上以直角打开Ge的过程。通过大气层。