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EXTENDED DEFECTS IN GaAs/Ge/GaAs HETEROSTRUCTURES WITH TURNING GaAs LAYERS
Bulletin of the Lebedev Physics Institute ( IF 0.6 ) Pub Date : 2021-01-30 , DOI: 10.3103/s106833562012012x I. P. Kazakov , S. A. Zinov’ev , A. V. Klekovkin , V. A. Sazonov , V. N. Kukin , N. I. Borgardt
中文翻译:
旋转GaAs层的GaAs / Ge / GaAs异质结构中的扩展缺陷
更新日期:2021-01-31
Bulletin of the Lebedev Physics Institute ( IF 0.6 ) Pub Date : 2021-01-30 , DOI: 10.3103/s106833562012012x I. P. Kazakov , S. A. Zinov’ev , A. V. Klekovkin , V. A. Sazonov , V. N. Kukin , N. I. Borgardt
Abstract
The GaAs layer turn on Ge at a right angle in the substrate plane was studied by high-energy electron diffraction and transmission electron microscopy methods when growing GaAs/Ge/GaAs heterostructures using individual molecular-beam epitaxy systems for GaAs and Ge, with sample transfer through atmosphere.
中文翻译:
旋转GaAs层的GaAs / Ge / GaAs异质结构中的扩展缺陷
摘要
利用高能电子衍射和透射电子显微镜方法研究了GaAs / Ge / GaAs异质结构在GaAs和Ge的单个分子束外延体系下生长并进行样品转移的情况下,GaAs层在衬底平面上以直角打开Ge的过程。通过大气层。