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Colossal grain growth in Cd(Se,Te) thin films and their subsequent use in CdTe epitaxy by close-spaced sublimation
Journal of Physics: Energy ( IF 7.0 ) Pub Date : 2021-01-29 , DOI: 10.1088/2515-7655/abd297
David S Albin 1 , Mahisha Amarasinghe 1, 2 , Matthew O Reese 1 , John Moseley 1 , Helio Moutinho 1 , Wyatt K Metzger 1
Affiliation  

Many technologies deposit thin films on inexpensive substrates, resulting in small grains due to classic nucleation and grain growth theory. For example, state-of-the-art solar cells are made by depositing CdSeTe and CdTe layers on inexpensive glass coated with nanocrystalline transparent conducting oxides (TCOs), like SnO2. Characteristically, the grain size of these films is on the order of the film thickness, i.e. a few microns. CdTe small-grain films have poor electro-optical properties and require CdCl2 passivation which fails to fully passivate grain boundaries, causes carrier compensation, and prevents implementing other II–VI alloys and materials to improve performance. Here, we present a method to increase grain size to 1 mm in CdSexTe1−x thin films deposited on glass/TCO substrates without CdCl2 treatment. The colossal grain growth is driven by mechanisms distinct from classic nucleation, grain growth, and Ostwald ripening and only occurs at low selenium content (x ∼ 0.1). We also demonstrate how these films can serve as templates for subsequent large-grain epitaxy of other compositions like CdTe, again without exposure to CdCl2. The results open new paths for thin film solar cell technology, and thin film devices in general.



中文翻译:

Cd(Se,Te)薄膜中的巨大晶粒生长及其通过近距离升华在CdTe外延中的后续应用

由于经典的成核和晶粒长大理论,许多技术都在廉价的基板上沉积薄膜,导致晶粒细小。例如,通过在便宜的玻璃上沉积CdSeTe和CdTe层来制造最先进的太阳能电池,该玻璃上涂有纳米晶透明导电氧化物(TCO),如SnO 2。在特征上,这些膜的晶粒尺寸为膜厚度的数量级,即几微米。CdTe小晶粒薄膜的电光性能很差,并且需要CdCl 2钝化,而钝化不能完全钝化晶界,不会引起载流子补偿,并妨碍使用其他II-VI合金和材料来提高性能。在这里,我们提出一种将CdSe x Te中晶粒尺寸增加到1 mm的方法未经CdCl 2处理的1-x薄膜沉积在玻璃/ TCO基板上。的巨大的晶粒生长是通过从经典成核,晶粒生长不同的机制驱动,奥斯特瓦尔德熟化和只发生在低的硒含量(X〜0.1)。我们还演示了如何将这些薄膜用作其他组合物(如CdTe)随后大晶粒外延的模板,而又无需暴露于CdCl 2。结果为薄膜太阳能电池技术和一般的薄膜器件开辟了新的道路。

更新日期:2021-01-29
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