The unipolar diode-like domain wall currents in LiNbO₃ single-crystal nanodevices are not only attractive in terms of their applications in nonvolatile ferroelectric domain wall memory, but also useful in half-wave and full-wave rectifier systems, as well as detector, power protection, and steady voltage circuits. Unlike traditional diodes, where the rectification functionality arises from the contact between n-type and p-type conductors, which are unchanged after off-line production, ferroelectric domain wall diodes can be reversibly created, erased, positioned, and shaped, using electric fields. We demonstrate such functionality using ferroelectric mesa-like cells, formed at the surface of an insulating X-cut LiNbO₃ single crystal. Under the application of an in-plane electric field above a coercive field along the polar Z axis, the domain within the cell is reversed to be antiparallel to the unswitched bottom domain via the formation of a conducting domain wall. The wall current was rectified using two interfacial volatile domains in contact with two side Pt electrodes. Unlike the nonvolatile inner domain wall, the interfacial domain walls disappear to turn off the wall current path after the removal of the applied electric field, or under a negative applied voltage, due to the built-in interfacial imprint fields. These novel devices have the potential to facilitate the random definition of diode-like elements in modern large-scale integrated circuits.

_{LiNbO 3}单晶纳米器件中的单极二极管状畴壁电流不仅在非易失性铁电畴壁存储器中的应用方面具有吸引力，而且在半波和全波整流器系统以及检测器中也很有用，电源保护和稳压电路。与传统二极管不同的是，整流功能来自 n 型和 p 型导体之间的接触，在离线生产后保持不变，铁电畴壁二极管可以使用电场可逆地创建、擦除、定位和成形. 我们使用在绝缘X切割 LiNbO ₃表面形成的铁电台面状电池展示了这种功能单晶。在沿极Z轴在矫顽场上方施加面内电场的情况下，通过形成导电畴壁，单元内的畴反转为与未切换的底部畴反平行。使用与两侧 Pt 电极接触的两个界面挥发性区域对壁电流进行整流。与非挥发性内畴壁不同，由于内置的​​界面压印场，在去除外加电场后或在负施加电压下，界面畴壁消失以关闭壁电流路径。这些新颖的器件有可能促进现代大规模集成电路中二极管类元件的随机定义。