We report the observation of in-plane anisotropic magnetoresistance and planar Hall effect in non-magnetic HfTe₅ thin layers. The observed anisotropic magnetoresistance as well as its sign is strongly dependent on the critical resistivity anomaly temperature T _p. Below T _p, the anisotropic magnetoresistance is negative with large negative magnetoresistance. When the in-plane magnetic field is perpendicular to the current, the negative longitudinal magnetoresistance reaches its maximum. The negative longitudinal magnetoresistance effect in HfTe₅ thin layers is dramatically different from that induced by the chiral anomaly as observed in Weyl and Dirac semimetals. One potential underlying origin may be attributed to the reduced spin scattering, which arises from the in-plane magnetic field driven coupling between the top and bottom surface states. Our findings provide valuable insights for the anisotropic magnetoresistance effect in topological electronic systems and the device potential of HfTe₅ in spintronics and quantum sensing.

我们报告了非磁性 HfTe ₅薄层中面内各向异性磁阻和平面霍尔效应的观察结果。观察到的各向异性磁阻及其符号强烈依赖于临界电阻率异常温度T _p。在T _p以下，各向异性磁阻为负，负磁阻大。当面内磁场垂直于电流时，负纵向磁阻达到最大值。HfTe _{5中的负纵向磁阻效应}薄层与在 Weyl 和 Dirac 半金属中观察到的手性异常引起的显着不同。一个潜在的潜在起源可能归因于自旋散射减少，这是由顶部和底部表面状态之间的平面内磁场驱动耦合引起的。_{我们的研究结果为拓扑电子系统中的各向异性磁阻效应以及 HfTe 5}在自旋电子学和量子传感中的器件潜力提供了有价值的见解。