A 900-MHz 1.2-V 4.36-mA low-noise amplifier (LNA) with a minimum of 0.92-dB noise figure (NF) at 868 MHz, −12-dBm IIP ₃ , with one inductor (external) is demonstrated. The circuit achieves narrowband input matching on a wideband LNA without inductive degeneration. A new half-cascoding technique is used to improve the input matching ( $S_{11}$ ) while simultaneously achieving sub-1-dB NF performance. The 0.13- $\mu \text{m}$ CMOS LNA is fabricated with embedded electrostatic discharge (ESD) protection diodes that add 60- and 80-fF loads at the RF input and output ports. At 868 MHz, the packaged LNA has a measured input return loss ( $S_{11}$ ) of −18 dB and the transmission gain ( $S_{21}$ ) of 14.2 dB. At 900 MHz, the LNA has a measured NF of 0.98 dB. The LNA (excluding the buffer) occupies an area of 0.047 mm ² . The chip passes the human body model (HBM) test with an ESD zap of 2.5 kV within 10% margin of its prezap $I$ – $V$ characteristics, under JEDEC standards. Multiple packaged chips were characterized with no perceptible difference in performance, indicating a robust design.

中文翻译：

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具有0.9dB噪声系数的4.4mA ESD安全900MHz LNA

演示了一个900MHz的1.2V 4.36mA低噪声放大器（LNA），在868MHz时噪声系数（NF）最低为0.92dB，-12dBm IIP ₃，带有一个电感器（外部）。该电路可在宽带LNA上实现窄带输入匹配，而不会引起感性退化。一种新的半串联编码技术用于改善输入匹配（ $ S_ {11} $ ），同时实现低于1 dB的NF性能。0.13- $ \ mu \ text {m} $ CMOS LNA由嵌入式静电放电（ESD）保护二极管制成，这些二极管在RF输入和输出端口上增加了60fF和80fF的负载。封装的LNA在868 MHz时具有测量的输入回波损耗（ $ S_ {11} $ ）为-18 dB，传输增益为（ $ S_ {21} $ ）14.2 dB。在900 MHz时，LNA的测得NF为0.98 dB。LNA（不包括缓冲器）占据0.047 mm ²的面积 。该芯片以2.5 kV的ESD击穿电压通过人体模型（HBM）测试，距离其预击穿距离不超过10％ $ I $ – $ V $ 符合JEDEC标准。多个封装芯片的特性没有明显的性能差异，表明设计坚固。