The longitudinal ρ_xx(B, T) and Hall ρ_xy(B, T) resistances are experimentally investigated in n-InGaAs/GaAs nanostructures with a single and double quantum wells in the magnetic field range B = 0–2.5 T and temperatures T = 1.8–20 K. It is shown that the origin of the temperature-independent point located at ${\omega }_c\tau \cong 1$ on the ρ_xx(B, T) curves is due to the combined action of the classical cyclotron motion and the quantum interference effects of weak localization and electron-electron interaction. The results obtained indicate that the transition from the dielectric phase to the phase of the quantum Hall effect is a crossover from weak localization (quantum interference effects in a weak magnetic field) to strong localization in quantizing magnetic fields in the quantum Hall effect regime.

中文翻译：

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InGaAs / GaAs结构中低磁场下的局域化和干扰引起的量子效应

纵向ρ _XX（乙，T）和霍尔ρ _XY（B， Ť）电阻进行了实验研究在Ñ -InGaAs /砷化镓纳米结构中的磁场范围内的单和双量子阱乙 = 0-2.5 T和温度Ť  = 1.8–20K。表明与温度无关的点的原点位于${\omega }_C\tau \cong \mathrm{1个}$在_ρxx（B，T）曲线上出现的原因是经典回旋加速器运动的结合作用以及弱局部化和电子-电子相互作用的量子干涉效应。所获得的结果表明，从介电相到量子霍尔效应相的过渡是从弱局域（弱磁场中的量子干涉效应）到强局域的交叉，量子化在量子霍尔效应范围内。