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Electric field ionization of boron acceptors in single-crystalline diamond
Low Temperature Physics ( IF 0.8 ) Pub Date : 2021-01-26 , DOI: 10.1063/10.0002901 I. V. Altukhov 1 , M. S. Kagan 1 , S. K. Paprotskiy 1 , N. A. Khvalkovskiy 1 , N. B. Rodionov 2 , A. P. Bol’shakov 3 , V. G. Ral’chenko 3 , R. A. Khmel’nitskiy 4
Low Temperature Physics ( IF 0.8 ) Pub Date : 2021-01-26 , DOI: 10.1063/10.0002901 I. V. Altukhov 1 , M. S. Kagan 1 , S. K. Paprotskiy 1 , N. A. Khvalkovskiy 1 , N. B. Rodionov 2 , A. P. Bol’shakov 3 , V. G. Ral’chenko 3 , R. A. Khmel’nitskiy 4
Affiliation
Vertical hole transport in single-crystalline diamond films with ohmic and Schottky contacts was studied at dc and pulsed electric fields up to ∼ 5⋅105 V/cm. Conductivity mechanisms at different fields were identified. The concentrations of free carriers (holes) and acceptors were determined. The hole recombination time at boron acceptors has been estimated. The mechanisms of electric field ionization of boron acceptors are discussed.
中文翻译：
单晶金刚石中硼受体的电场电离
与欧姆和肖特基接触单晶金刚石薄膜的垂直空穴传输进行了研究，在直流和脉冲电场高达〜5⋅10 5 V / cm的。确定了不同领域的电导率机制。确定了自由载流子（空穴）和受体的浓度。估计了硼受体上的空穴复合时间。讨论了硼受体的电场电离机理。
更新日期：2021-01-29
中文翻译：
单晶金刚石中硼受体的电场电离
与欧姆和肖特基接触单晶金刚石薄膜的垂直空穴传输进行了研究，在直流和脉冲电场高达〜5⋅10 5 V / cm的。确定了不同领域的电导率机制。确定了自由载流子（空穴）和受体的浓度。估计了硼受体上的空穴复合时间。讨论了硼受体的电场电离机理。
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