In this study, we observe that the conductance of a quantum point contact on a GaAs/AlGaAs double quantum well depends significantly on the magnetic field perpendicular to the two-dimensional electron gas. In the presence of the magnetic field, the subband edge splitting due to the Zeeman energy reaches 0.09 meV at 0.16 T, thereby suggesting an enhanced g-factor. The estimated g-factor enhancement is 17.5 times that of the bare value. It is considered that a low electron density and high mobility makes it possible to reach a strong many-body interaction regime in which this type of strong enhancement in g-factor can be observed.

中文翻译：

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双层量子点接触中平面磁场中的大塞曼分裂

在这项研究中，我们观察到GaAs / AlGaAs双量子阱上的量子点接触的电导率很大程度上取决于垂直于二维电子气的磁场。在存在磁场的情况下，由于塞曼能量引起的子带边缘分裂在0.16 T时达到0.09 meV，从而表明g因子增强。估计的g因子增强是裸值的17.5倍。认为低电子密度和高迁移率使得可以达到强的多体相互作用机制，其中可以观察到这种类型的g因子强烈增强。