A Universal Model for DX‐Center Binding Energy in Cubic III–V Compounds,Physica Status Solidi (B) - Basic Solid State Physics

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A Universal Model for DX‐Center Binding Energy in Cubic III–V Compounds
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-01-29 , DOI: 10.1002/pssb.202000596
Sergey Yu. Karpov ₁

Affiliation

Based on the approach suggested by Chadi and Chang, a simple analytical model is suggested for estimating binding energies of DX‐centers in n‐type zinc‐blende semiconductor alloys with direct–indirect bandgap transition. Comparison of the model predictions with numerous experiments shows the only adjustable model parameter to be independent of either kind of n‐type impurity or particular alloy. Though the nature of such a universality is not completely clear, the model can be helpful for practical estimations and modeling/simulation of semiconductor devices utilizing the ternary and quaternary compounds. Application of the model to wide‐bandgap zinc‐blende semiconductors reveals a general trend of decreasing DX‐center binding energy with the bandgap, resulting in narrowing the composition range of alloys where DX‐center formation dominates over that of conventional shallow donors. Considering DX‐centers with multiple‐charge impurity statistics enables accurate calculation of free electron concentration and concentration of ionized impurities in the space‐charge regions.

中文翻译：

立方III–V化合物中DX-中心结合能的通用模型

根据Chadi和Chang提出的方法，建议了一个简单的分析模型来估计具有直接-间接带隙跃迁的n型闪锌矿半导体合金中DX中心的结合能。模型预测与大量实验的比较表明，唯一可调整的模型参数与n型杂质或特定合金无关。尽管这种通用性的性质尚不完全清楚，但是该模型对于使用三元和四元化合物的半导体器件的实际估计和建模/仿真是有帮助的。该模型在宽带隙宽带锌混合半导体中的应用表明，带隙降低了DX中心结合能的总体趋势，导致合金的组成范围变窄，而DX中心的形成要优于传统的浅施主。考虑到具有多个电荷杂质统计数据的DX中心，可以准确计算自由电子浓度和空间电荷区域中的电离杂质浓度。

更新日期：2021-01-29

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