Analysis of Deep Traps in Mist Chemical Vapor Deposition‐Grown n‐Type α‐Ga2O3 by Photocapacitance Method,Physica Status Solidi (B) - Basic Solid State Physics

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Analysis of Deep Traps in Mist Chemical Vapor Deposition‐Grown n‐Type α‐Ga2O3 by Photocapacitance Method
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-01-29 , DOI: 10.1002/pssb.202000622
Hitoshi Takane ₁ , Kentaro Kaneko _{1,

2,

3} , Takashi Shinohe ₄ , Shizuo Fujita _{1,

3}

Affiliation

Deep traps in n‐type α‐Ga₂O₃ grown by mist chemical vapor deposition are analyzed by the photocapacitance method and deep‐level optical spectroscopy. The trap levels at E_c−(≈2.0 eV) (E₁), E_c−(≈2.5 eV) (E₂), and E_c−(≈3.2 eV) (E₃) are evident and their concentrations are 3.5 × 10¹⁴, 3.6 × 10¹⁴, and 6.2 × 10¹⁵ cm⁻³, respectively, which are much lower than ever reported for α‐Ga₂O₃. The Frank–Condon shift of all three traps is large as seen for β‐Ga₂O₃, indicating a high degree of lattice coupling in the midgap state in α‐Ga₂O₃.

中文翻译：

光电容法分析薄化学气相沉积生长n型α-Ga2O3中的深层陷阱

在n型α-嘎深陷阱₂ ö ₃生长由雾化学气相沉积由光电电容方法和深能级的光光谱分析。在陷阱能级ë _Ç（≈2.0电子伏特）（ - ë ₁），È _Ç - （≈2.5电子伏特）（ë ₂），和È _Ç - （≈3.2电子伏特）（Ë ₃）是明显的，并且它们的浓度是3.5 ×10 ¹⁴，3.6×10 ¹⁴和6.2×10 ¹⁵ 厘米^-3，分别，其比以往报道的低得多的α-嘎₂ ö ₃。如图对的β-Ga所有三个陷阱的弗兰克-康登移是大₂ ö ₃，表明α -镓的中间带隙态高度晶格耦合的₂ ö ₃。

更新日期：2021-01-29

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