The compound UNi_0.45Ge₂ was studied by means of X-ray diffraction (XRD), magnetization, neutron diffraction, specific heat and electrical resistivity measurements performed in wide ranges of temperature and magnetic field. The single-crystal XRD experiment indicated that the material crystallizes in the orthorhombic CeNiSi₂-type structure with the lattice parameters a = 4.1062(2) Å, b = 15.9272(8) Å and c = 4.0461(2) Å. The physical properties measurements showed that it orders antiferromagnetically at T_N = 47 K. The magnetic ordering was confirmed by the neutron diffraction experiment, which revealed that the ordered magnetic moments are aligned along the crystallographic b-axis in a sequence −++−. In strong magnetic fields, a distinct field-induced first-order metamagnetic phase transition occurs, characterized by a large magnetic hysteresis. Temperature and field variations of the electrical resistivity are strongly affected by the atom disorder in the crystallographic unit cell of the investigated compound.

通过X射线衍射（XRD），磁化，中子衍射，在较宽的温度和磁场范围内进行比热和电阻率测量，研究了化合物UNi _0.45 Ge ₂。X射线单晶实验表明，该材料在正交晶型CeNiSi ₂型结构中结晶，晶格参数为a  = 4.1062（2）Å，b  = 15.9272（8）Å和c  = 4.0461（2）。物理性能测量表明，它在T _N时反铁磁有序 ＝ 47K。通过中子衍射实验确认了磁有序性，这揭示了有序磁矩沿着晶体学b轴以-++-的顺序排列。在强磁场中，会发生明显的磁场感应的一阶亚磁相变，其特征是较大的磁滞。电阻率的温度和场变化受所研究化合物的晶体学晶胞中原子无序的强烈影响。