This research focuses on the study of the growth quality, by means of the chemical profile analysis, of good structural and morphological quality chemical bath deposited PbSe thin films on glass substrates (SiO₂) by Rutherford Backscattering Spectroscopy (RBS). RBS results with other complementary techniques like XRD and SEM were contrasted. Thin films by using different NaOH concentrations during the growth process were synthesized. XRD studies showed the films polycrystalline nature and their good structural quality. Pure structural effects of amorphous SiO₂ and PbSe face-cubic-centered structure were observed. SEM imaging analysis revealed the good morphological growth quality of the PbSe films, observing well-defined films dimensions (thickness), a clear film-to-substrate transition at the interface and good microstructural homogeneity. According to XRD and SEM results, RBS experiments contrasted with theoretical simulations evidenced the good growth quality of the PbSe films. A good agreement between experimental data and theoretical modelling by assuming a simple film/substrate structure with a perfectly defined interface and negligible film roughness for the PbSe/SiO₂ samples was achieved. RBS experimental-theoretical analysis reveal the non-stoichiometric nature of the PbSe films, being consequent with preliminary EDS based chemical studies. In particular, a predominance of Se with respect to Pb (considering the atomic concentration) in all samples was observed, suggesting a possible p-type conductivity. By stopping power analysis, thin films thicknesses between 141 and 296 [nm] were also estimated, being comparable to those obtained from SEM imaging analysis of the samples cross-sections. General results show that some aspects (chemical profile of the structure and interfaces quality) related to the growth quality of the chemical bath deposited PbSe thin films, studied by RBS experiments, are considerably intercorrelated to those analyzed by other techniques like XRD and SEM. This suggests RBS method as a suitable technique for a complete and rigorous analysis of thin films growth quality.

这项研究的重点是通过化学轮廓分析，通过卢瑟福背散射光谱（RBS）研究在玻璃衬底（SiO ₂）上具有良好结构和形态质量的化学浴沉积PbSe薄膜的生长质量。将RBS结果与其他补充技术（如XRD和SEM）进行了对比。通过在生长过程中使用不同的NaOH浓度来合成薄膜。XRD研究表明该膜具有多晶性质和良好的结构质量。非晶SiO _2的纯结构效应并观察到了PbSe面立方中心结构。SEM成像分析显示了PbSe薄膜的良好形态生长质量，观察到了明确定义的薄膜尺寸（厚度），界面处清晰的薄膜到基底过渡以及良好的微观结构均匀性。根据XRD和SEM结果，RBS实验与理论模拟对比表明PbSe薄膜具有良好的生长质量。通过假设具有完美定义的界面的简单薄膜/基片结构以及对于PbSe / SiO _2的薄膜粗糙度可以忽略不计，在实验数据和理论模型之间取得了良好的一致性获得样品。RBS实验理论分析揭示了PbSe膜的非化学计量性质，这是基于初步EDS的化学研究的结果。特别是，在所有样品中都观察到Se相对于Pb占优势（考虑原子浓度），表明可能存在p型导电性。通过停止功率分析，还可以估算出141至296 [nm]的薄膜厚度，这与从样品横截面的SEM成像分析获得的厚度相当。总体结果表明，通过RBS实验研究，与化学浴沉积的PbSe薄膜的生长质量有关的某些方面（结构的化学分布和界面质量）与通过XRD和SEM等其他技术分析的方面之间存在很大的相互关系。