In this study, we investigated the cyclotron–interface phonon resonance line-width in GaAs/AlAs asymmetric semiparabolic quantum wells when electrons are scattered by symmetric (antisymmetric) interface optical phonons. The operator projection and profile methods were employed to calculate the expressions for the absorption power and the full width at half maximum (FWHM), respectively. We found that the electron–interface phonon interactions by the antisymmetric modes are weaker than those by the symmetric modes under all phonon emission and absorption cases. In addition, the FWHM is more dominant for interface phonon absorption compared with that for interface phonon emission. The interface optical phonon modes at the resonance peak with a lower-photon frequency are much more important for electron–interface optical phonon scattering than those at the resonance peak with a higher-photon frequency. Our results are consistent with previously reported experimental data.

在这项研究中，我们研究了当电子被对称（反对称）界面光子散射时，GaAs / AlAs非对称半抛物线量子阱中回旋界面声子共振线宽。使用算子投影法和轮廓法分别计算吸收功率和半峰全宽（FWHM）的表达式。我们发现，在所有声子发射和吸收情况下，反对称模式的电子界面声子相互作用都比对称模式弱。此外，与界面声子发射相比，FWHM在界面声子吸收方面更为占优势。光子频率较低的共振峰处的界面光子模式对电子界面光子的散射比光子频率较高的共振峰处的界面声子模式重要得多。我们的结果与先前报道的实验数据一致。