Abstract

Two-dimensional (2D) semiconductor crystals can be applied to further increase the efficiency and speed of field-effect transistors. Such transistors are free from some of the adverse effects present in the traditional MOS transistors when their size is reduced. In this study, the model of the transistor MOS structure with the channel made of a 2D-crystal is proposed and its charge properties are investigated. The numerical simulation of such characteristics is carried out within the range of variations of the electrophysical properties of 2D-crystals representative of MoSe₂, WS₂, WSe₂, ZrSe₂, HfSe₂, and PtTe₂. The self-consistent correlation between electrophysical parameters of the structure via the chemical potential is found, and the effect of the potential of the field electrode and the gate insulator’s capacitance on them is demonstrated. The calculations of the steepness of the transfer characteristic and the voltage gain of such a transistor structure demonstrate that, for the channel made from transition metal dichalcogenides (TMD) with the forbidden gap band falling in the range 0.25–2.1 eV, the magnitudes of these parameters can attain 0.1 mA/V and 1000, respectively.

中文翻译：

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具有二维晶体的沟道的MOS晶体管结构的电荷特性

摘要

可以应用二维（2D）半导体晶体来进一步提高场效应晶体管的效率和速度。当减小其尺寸时，这种晶体管没有传统MOS晶体管中存在的一些不利影响。在这项研究中，提出了具有由2D晶体制成的沟道的晶体管MOS结构的模型，并研究了其电荷特性。在代表MoSe ₂，WS ₂，WSe ₂，ZrSe ₂，HfSe ₂和PtTe ₂的2D晶体的电物理性质变化的范围内，进行这种特性的数值模拟。。通过化学势发现结构的电物理参数之间的自洽相关性，并证明了场电极的电势和栅绝缘体的电容对其的影响。对这种晶体管结构的传输特性的陡度和电压增益的计算表明，对于由禁带宽度在0.25-2.1 eV范围内的过渡金属二卤化物（TMD）制成的沟道，这些沟道的幅度参数可以分别达到0.1 mA / V和1000。