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Ferroelectric Properties and Polarization Fatigue of La:HfO2 Thin‐Film Capacitors
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-01-27 , DOI: 10.1002/pssr.202000481 Xiaofei Li 1 , Chen Li 2 , Zhiyu Xu 1 , Yongsheng Li 3 , Yihao Yang 1 , Haihua Hu 1 , Zhizheng Jiang 1 , Jiayi Wang 1 , Jiaxin Ren 1 , Chunyan Zheng 1 , Chaojing Lu 4 , Zheng Wen 1
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-01-27 , DOI: 10.1002/pssr.202000481 Xiaofei Li 1 , Chen Li 2 , Zhiyu Xu 1 , Yongsheng Li 3 , Yihao Yang 1 , Haihua Hu 1 , Zhizheng Jiang 1 , Jiayi Wang 1 , Jiaxin Ren 1 , Chunyan Zheng 1 , Chaojing Lu 4 , Zheng Wen 1
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Recently, doped HfO2 thin films have attracted considerable attention because of promising applications in complementary metal–oxide–semiconductor (CMOS)‐compatible ferroelectric memories. Herein, the ferroelectric properties and polarization fatigue of La:HfO2 thin‐film capacitors are reported. By varying the substrate lattice constant and film thickness, a robust remanent polarization of ≈16 μC cm−2 is achieved in a 12 nm‐thick Pt/La:HfO2/La0.67Sr0.33MnO3 capacitor. Fatigue measurements are conducted using designed pulse sequences, in which the voltage, pulse width, and interval time are changed to observe the evolution of switchable polarization with increasing cycles. Severe fatigue is observed when the La:HfO2 capacitors are partially switched and the interval between the bipolar switching is elongated. These behaviors may be ascribed to the domain wall pinning scenario, in which domain switching is blocked by the migration and aggregation of charges on non‐electroneutral walls. Further analysis of the fatigue behaviors with a nucleation‐limited‐switching model shows that the mean time and activation field for polarization switching are increased in fatigued La:HfO2 capacitors because electrical stimuli are required to disperse the aggregated charges before the domains are set free. These results facilitate the design and fabrication of HfO2‐based ferroelectric memories with improved device reliability.
中文翻译：
La：HfO2薄膜电容器的铁电特性和极化疲劳
最近，由于在互补金属-氧化物-半导体（CMOS）兼容铁电存储器中的应用前景广阔，掺杂的HfO 2薄膜引起了相当大的关注。在此，报道了La：HfO 2薄膜电容器的铁电特性和极化疲劳。通过改变衬底晶格常数和薄膜厚度，在12 nm厚的Pt / La：HfO 2 / La 0.67 Sr 0.33 MnO 3中可获得约16μCcm -2的强大剩余极化。电容器。使用设计的脉冲序列进行疲劳测量，其中改变电压，脉冲宽度和间隔时间，以观察随着周期增加而可切换极化的演变。当La：HfO 2电容器部分切换并且双极性切换之间的间隔延长时，会观察到严重的疲劳。这些行为可能归因于畴壁固定情况，在这种情况下，畴开关受到非电中性壁上电荷的迁移和聚集的阻碍。利用成核限制转换模型对疲劳行为的进一步分析表明，在疲劳的La：HfO 2中，极化转换的平均时间和激活场增加了电容器，因为在区域释放之前需要电刺激来分散聚集的电荷。这些结果促进了基于HfO 2的铁电存储器的设计和制造，并提高了器件的可靠性。
更新日期：2021-01-27
中文翻译：
La：HfO2薄膜电容器的铁电特性和极化疲劳
最近，由于在互补金属-氧化物-半导体（CMOS）兼容铁电存储器中的应用前景广阔，掺杂的HfO 2薄膜引起了相当大的关注。在此，报道了La：HfO 2薄膜电容器的铁电特性和极化疲劳。通过改变衬底晶格常数和薄膜厚度，在12 nm厚的Pt / La：HfO 2 / La 0.67 Sr 0.33 MnO 3中可获得约16μCcm -2的强大剩余极化。电容器。使用设计的脉冲序列进行疲劳测量，其中改变电压，脉冲宽度和间隔时间，以观察随着周期增加而可切换极化的演变。当La：HfO 2电容器部分切换并且双极性切换之间的间隔延长时，会观察到严重的疲劳。这些行为可能归因于畴壁固定情况，在这种情况下，畴开关受到非电中性壁上电荷的迁移和聚集的阻碍。利用成核限制转换模型对疲劳行为的进一步分析表明，在疲劳的La：HfO 2中，极化转换的平均时间和激活场增加了电容器，因为在区域释放之前需要电刺激来分散聚集的电荷。这些结果促进了基于HfO 2的铁电存储器的设计和制造，并提高了器件的可靠性。
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