Spectromicroscopy and imaging of photoexcited electron dynamics at in-plane silicon pn junctions,Nanoscale

当前位置： X-MOL 学术 › Nanoscale › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Spectromicroscopy and imaging of photoexcited electron dynamics at in-plane silicon pn junctions
Nanoscale ( IF 5.8 ) Pub Date : 2020-12-30 , DOI: 10.1039/d0nr07954e
Aiqin Hu _{1,

2,

3,

4,

5} , Wei Liu _{1,

2,

3,

4,

5} , Xiaofang Li _{1,

2,

3,

4,

5} , Shengnan Xu _{6,

7,

8,

9,

10} , Yaolong Li _{1,

2,

3,

4,

5} , Zhaohang Xue _{1,

2,

3,

4,

5} , Jinglin Tang _{1,

2,

3,

4,

5} , Lulu Ye _{1,

2,

3,

4,

5} , Hong Yang _{1,

2,

3,

4,

5} , Ming Li _{5,

10,

11,

12} , Yu Ye _{1,

2,

3,

4,

5} , Quan Sun _{10,

13,

14} , Qihuang Gong _{1,

2,

3,

4,

5} , Guowei Lu _{1,

2,

3,

4,

5}

Affiliation

The ultrafast spatiotemporal imaging of photoexcited electrons is essential to understanding interfacial electron dynamic processes. We used time- and energy-resolved photoemission electron microscopy (PEEM) to investigate the photoexcited electron dynamics at multiplex in-plane silicon pn junctions. We found that the measured kinetic energy of photoelectrons from n-type regions is higher than that from p-type regions owing to different work functions. Interestingly, the kinetic energy of outer n-type regions is higher than that of inner n-type regions, which is caused by the reverse bias induced by photoemission. Time-resolved PEEM results reveal different evolution rates of hot electrons in different doping regions. The rise time of the n-type (outer n-type) regions is faster than that of the p-type (inner n-type) regions. So, closed doping patterns can influence the electron spectra and dynamics at the micro-nano scale. These results help us to understand the ultrafast dynamics of carriers at in-plane interfaces and optimize optoelectronic integrated devices with complex heterojunctions.

中文翻译：

平面硅pn结处的光激发电子动力学的光谱显微镜和成像

光激发电子的超快速时空成像对于理解界面电子动力学过程至关重要。我们使用时间和能量分辨光电子显微镜（PEEM）来研究多重面内硅pn结处的光激发电子动力学。我们发现，由于功函数不同，从n型区域测得的光电子动能高于从p型区域测得的动能。有趣的是，外部n型区域的动能高于内部n型区域的动能，这是由光发射引起的反向偏压引起的。时间分辨的PEEM结果揭示了在不同掺杂区中热电子的不同演化速率。n型（外部n型）区域的上升时间比p型（内部n型）区域的上升时间快。所以，封闭的掺杂模式会影响电子光谱和微纳米尺度的动力学。这些结果有助于我们了解平面内接口处载流子的超快动态，并优化具有复杂异质结的光电集成器件。

更新日期：2021-01-26

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11