In this article, low-temperature anode bonding technology is used to realize wafer-level Al–Al interconnection in MEMS grating gyroscope. The gyroscope structure was fabricated on silicon by micromachining process. Both Al wiring and Al grating were fabricated by magnetron sputtering. Before bonding, the bonded wafers were treated through Ar plasma. The wafer-level bonding was then performed at 330 °C for 15 min under 0.21 MPa with a dc voltage of 1000 V. Acoustic and interfacial tests showed a defect-free Al–Al interconnection. The average bonding strength was as high as 33.94 MPa and the measured resistance was approximate to the theoretical value. The bonded structure was also undamaged under 1500-g acceleration shock. It is concluded that the low-temperature anode bonding for wafer-level Al–Al interconnection will further promote the development of MEMS grating gyroscope.

中文翻译：

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MEMS陀螺仪晶片级Al-Al互连的低温阳极键合

在本文中，低温阳极键合技术用于在MEMS光栅陀螺仪中实现晶圆级Al-Al互连。陀螺仪结构是通过微加工工艺在硅上制造的。通过磁控溅射制造Al布线和Al光栅。在键合之前，通过Ar等离子体对键合的晶片进行处理。然后在0.21 MPa和330 V的温度下于330°C进行15分钟的晶圆级键合，直流电压为1000V。声学和界面测试表明Al-Al互连无缺陷。平均粘结强度高达33.94 MPa，测得的电阻接近理论值。粘结结构在1500 g加速度冲击下也未损坏。