Advanced Series Resistance Imaging for Silicon Solar Cells via Electroluminescence,Physica Status Solidi (A) - Applications and Materials Science

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Advanced Series Resistance Imaging for Silicon Solar Cells via Electroluminescence
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-01-26 , DOI: 10.1002/pssa.202000546
Georg Dost ₁ , Hannes Höffler ₁ , Johannes M. Greulich ₁

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Herein, a method for advanced series resistance imaging via electroluminescence (EL) for silicon solar cells is presented. The well‐known method by Haunschild et al. is revisited. The Fuyuki assumption of a linear relation between diffusion length and EL signal is shown to be not applicable to silicon devices nowadays due to larger minority charge carrier diffusion lengths and thinner solar cells. A new relation derived by Breitenstein is used here instead. The updated method for series resistance and saturation current imaging based on two EL images, which show a far superior separation of contrast and almost 60% shorter data acquisition times in comparison with the original method by Haunschild, is presented. The Weber contrast of the unwanted signal caused by recombination in resistance image is reduced from 0.89 to 0.44, using the advanced method for a prominent feature on the sample cell. The contrast due to resistance stays at the same level. The dark saturation current density images show 20% higher peaks at recombination active areas and also a 5% low.

中文翻译：

通过电致发光对硅太阳能电池进行高级串联电阻成像

本文中，提出了一种用于硅太阳能电池的经由电致发光（EL）的高级串联电阻成像的方法。Haunschild等人的著名方法。再次访问。由于较大的少数载流子扩散长度和较薄的太阳能电池，因此现今的扩散长度和EL信号之间呈线性关系的Fuyuki假设已不适用于硅器件。而是在这里使用由Breitenstein派生的新关系。提出了一种基于两个EL图像的串联电阻和饱和电流成像的更新方法，与Haunschild的原始方法相比，该方法显示出更好的对比度分离，并且数据采集时间缩短了近60％。由电阻图像中的重组引起的有害信号的韦伯对比度从0.89降低到0.44，使用高级方法获得样品池上的突出特征。由于电阻引起的对比度保持在同一水平。暗饱和电流密度图像在重组有效区域显示出高出20％的峰值，还低出5％。

更新日期：2021-03-17

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