An array of GaN nanowires (NWs) on Si substrate is synthesized by molecular beam epitaxy. Measurements of electrical properties at room temperature of single NWs transferred to an auxiliary substrate demonstrate that the current density reaches an extremely high level of 2 MA cm⁻² without NW damage. Taking into account the limited conductivity of the NW periphery due to electron surface states, that is, the conduction channel narrowing, the effective current density can reach 3 MA cm⁻².

中文翻译：

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单根GaN纳米线可实现极高的电流换向

通过分子束外延合成在Si衬底上的GaN纳米线（NWs）阵列。转移到辅助基板的单个NW在室温下的电性能测量表明，电流密度达到2 MA cm ^-2的极高水平，而没有NW损坏。考虑到由于电子表面状态而导致的NW外围的有限电导率，即导电沟道变窄，有效电流密度可以达到3MA cm ^-2。