ABSTRACT

Highly ordered silicon nanostructures were fabricated using the nanosphere mask and reactive ion etching method. A self-assembled SiO₂ nanospheres monolayer obtained by spin-coating method was used as an etching mask for pattern transfer onto the Si substrate. The shape and height of these nanostructures were precisely controlled by the etching time. The optical properties of as-prepared nanostructure were investigated by experiments and simulation. Experimental results showed that the average reflectance in wavelength range of 400–1000 nm decreased from 33.6% to 4.6%. Simulation results were in good agreement with experimental results. Accordingly, this novel method is therefore considered to be an easy approach to fabricate different nanostructures for broadband antireflective surfaces for solar cells.

摘要

使用纳米球掩模和反应离子蚀刻方法制造了高度有序的硅纳米结构。通过旋涂法获得的自组装SiO ₂纳米球单层被用作蚀刻掩模，用于将图案转移到Si衬底上。这些纳米结构的形状和高度由蚀刻时间精确控制。通过实验和模拟研究了所制备的纳米结构的光学性质。实验结果表明，400-1000 nm波长范围内的平均反射率从33.6%下降到4.6%。仿真结果与实验结果吻合较好。因此，这种新方法被认为是一种简单的方法来制造用于太阳能电池的宽带抗反射表面的不同纳米结构。