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The Effects of Oxygen Vatcancies on Electrical and Magnetic Properties of LaOBiSSe
Journal of Superconductivity and Novel Magnetism ( IF 1.6 ) Pub Date : 2021-01-25 , DOI: 10.1007/s10948-021-05806-0
Jun Shu , Hongwei Yang , Yue Liu , Shiheng Liu , Zhiwei Wen , Yajing Cui , Yongliang Chen , Yong Zhao

LaO1−xBiSSe polycrystalline samples were successfully synthesized by conventional solid-state reaction method. The effects of oxygen vacancies on the crystal structure, magnetic properties under atmospheric and high pressure, and electrical property of LaOBiSSe were investigated. Polycrystalline samples LaO1−xBiSSe with x = 0–0.1 were well indexed to the tetragonal CeOBiS2-type structure with the space group P4/nmm. With increasing oxygen vacancy content, the crystal lattice contracted significantly along the c-axis, the semiconductor behavior was suppressed, and the metal-semiconductor transition temperature decreased, which is a necessary prerequisite for superconductivity in BiCh2-based (Ch = S and Se) system. However, oxygen vacancy level introduced in this work is insufficient to further contract the crystal lattice and increase carrier density. Even though external pressure (~ 1 GPa) was applied, no superconducting transition corresponding to LaO1−xBiSSe appeared except for that of manometer Pb. The reasons for the absence of superconductivity in LaO1−xBiSSe system were discussed.



中文翻译:

氧空位对LaOBiSSe的电磁性能的影响

通过传统的固态反应方法成功地合成了LaO 1- x BiSSe多晶样品。研究了氧空位对LaOBiSSe的晶体结构,大气压和高压下的磁性能以及电性能的影响。多晶样品LAO 1- X BiSSe与X  = 0-0.1被很好地指示到四方CeOBiS 2与空间群型结构P 4 / NMM。随着氧空位含量的增加,晶格沿c方向显着收缩。轴,抑制半导体行为,降低金属-半导体转变温度,这是基于Bi Ch 2的(Ch  = S和Se)系统超导性的必要前提。然而,这项工作中引入的氧空位水平不足以进一步收缩晶格并增加载流子密度。即使施加了外部压力(〜1 GPa),除了压力计Pb以外,没有出现与LaO 1- x BiSSe相对应的超导转变。讨论了LaO 1- x BiSSe系统中不存在超导性的原因。

更新日期:2021-01-25
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