The performance of a n/p betavoltaic heterostructure, i.e. aluminum gallium arsenide (Al_xGa_1-xAs) on gallium arsenide (GaAs) substrate has been evaluated by nickel-63 (Ni⁶³) beta-particles irradiation with anaverage kinetic energy of 17.1 keV. The thickness of Al_xGa_1-xAs emitter layer was set to 1.2 μm with an aluminum molar fraction of 0.1. The thickness of GaAs base region was fixed to be 3 μm. During the calculations, the reflection from the front surface, the metallurgical interface, and the limits of the depletion region were carefully taken into account. Moreover, the equivalent circuit accounts for the ohmic losses. The simulation results reveal that by using a radioactivity density of 10 mCi/cm², the conversion efficiency (ɳ) of an optimized device structure increases up to 33%. The other cell electrical parameters, such as the short-circuit current density (J_sc), the open-circuit voltage (V_oc), and the maximum electrical power density (P_max) are observed to be 438.09 nA/cm², 0.97 V, and 337.35 nW/cm², respectively.

一个的性能N / P贝塔伏特异质结构，即铝镓砷化物（铝_X镓_1-X如砷化镓）（砷化镓）衬底已经由镍- 63（评估的Ni ⁶³）的β-粒子照射的anaverage动能17.1 keV。Al _x Ga _1-x As发射极层的厚度设置为1.2μm，铝的摩尔分数为0.1。GaAs的厚度基本区域固定为3μm。在计算过程中，仔细考虑了来自前表面，冶金界面和耗尽区范围的反射。此外，等效电路解决了欧姆损耗。仿真结果表明，通过使用10毫居里/ cm的放射性密度²，转换效率（ɳ优化的器件结构的）向上增加至33％。观察到其他电池电参数，例如短路电流密度（J _sc），开路电压（V _oc）和最大电功率密度（P _max）为438.09 nA / cm ^2。分别为0.97 V和337.35 nW / cm ²。