This paper presents a CMOS based tunable bandgap voltage and current reference generation circuit. The proposed circuit is designed without using Bipolar Junction Transistors (BJTs) for Proportional-To-Absolute-Temperature and Complementary-To-Absolute-Temperature generation, thus eliminating the problem of implementing BJT in CMOS fabrication process. The proposed circuit is simulated in standard 180 nm CMOS technology. A constant reference voltage (\(V_{ref}\)) from 850 mV to 1.14 V and a constant reference current (\(I_{ref}\)) from 170 to 227 nA is generated for corresponding supply voltage (\(V_{dd}\)) tuned from 1.5 to 2 V for low power applications with an extended temperature range from − 55 to 175 \(^{\circ }\)C. The proposed circuit at \(V_{dd}\)= 1.8 V has a Temperature Coefficient (TC) of 0.37 and 0.53 ppm/\(^{\circ }\)C for \(V_{ref}\) and \(I_{ref}\) respectively, with a total power consumption of 594 nW (at \(V_{ref}\) = 1.02 V and \(I_{ref}\) = 204.5 nA). A monte-carlo simulation of the design is done for 1000 samples. The monte-carlo simulation for \(\hbox {V}_{{ref}}\), \(\hbox {I}_{{ref}}\) and TC is done across the \(\hbox {V}_{{dd}}\) (i.e. \(\hbox {V}_{{dd}} = 2\,\hbox {V}\) to 1.5 V).

本文提出了一种基于CMOS的可调带隙电压和电流基准产生电路。所设计的电路在设计时不使用双极结型晶体管（BJT）来产生绝对比温度和互补绝对温度，从而消除了在CMOS制造过程中实现BJT的问题。拟议的电路采用标准的180 nm CMOS技术进行仿真。对于相应的电源电压（\（V_），产生从850 mV到1.14 V的恒定参考电压（\（V_ {ref} \））和从170到227 nA的恒定参考电流（\（I_ {ref} \））。{dd} \））从1.5V调节至2V，适用于低功耗应用，扩展温度范围为− 55至175  \（^ {\ circ} \）C.拟议的\（V_ {dd} \） = 1.8 V的电路的温度系数（TC）为0.37和0.53 ppm / \（^ {\ circ} \） C对于\（V_ {ref} \）和\（I_ {ref} \），总功耗为594 nW（在\（V_ {ref} \） = 1.02 V和\（I_ {ref} \） = 204.5 nA时）。该设计的蒙特卡洛仿真完成了1000个样本。\（\ hbox {V} _ {{ref}} \），\（\ hbox {I} _ {{ref}} \）和TC的蒙特卡罗模拟是在\（\ hbox {V} _ {{dd}} \）（即\（\ hbox {V} _ {{dd}} = 2 \，\ hbox {V} \）到1.5 V）。