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Robust anomalous Hall effect and temperature-driven Lifshitz transition in Weyl semimetal Mn3Ge
Nanoscale ( IF 5.8 ) Pub Date : 2021-1-4 , DOI: 10.1039/d0nr07946d Xiaolei Wang 1, 2, 3, 4, 5 , Dong Pan 1, 2, 3, 4, 5 , Qingqi Zeng 3, 5, 6, 7, 8 , Xue Chen 2, 3, 4, 5, 9 , Hailong Wang 1, 2, 3, 4, 5 , Duo Zhao 1, 2, 3, 4, 5 , Zhiyang Xu 5, 10, 11, 12, 13 , Qianqian Yang 5, 10, 11, 12, 13 , Jinxiang Deng 5, 10, 11, 12, 13 , Tianrui Zhai 5, 10, 11, 12, 13 , Guangheng Wu 3, 5, 6, 7, 8 , Enke Liu 3, 5, 6, 7, 8 , Jianhua Zhao 1, 2, 3, 4, 5
Nanoscale ( IF 5.8 ) Pub Date : 2021-1-4 , DOI: 10.1039/d0nr07946d Xiaolei Wang 1, 2, 3, 4, 5 , Dong Pan 1, 2, 3, 4, 5 , Qingqi Zeng 3, 5, 6, 7, 8 , Xue Chen 2, 3, 4, 5, 9 , Hailong Wang 1, 2, 3, 4, 5 , Duo Zhao 1, 2, 3, 4, 5 , Zhiyang Xu 5, 10, 11, 12, 13 , Qianqian Yang 5, 10, 11, 12, 13 , Jinxiang Deng 5, 10, 11, 12, 13 , Tianrui Zhai 5, 10, 11, 12, 13 , Guangheng Wu 3, 5, 6, 7, 8 , Enke Liu 3, 5, 6, 7, 8 , Jianhua Zhao 1, 2, 3, 4, 5
Affiliation
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Topological Weyl semimetals have attracted considerable interest because they manifest underlying physics and device potential in spintronics. Large anomalous Hall effect (AHE) in non-collinear antiferromagnets (AFMs) represents a striking Weyl phase, which is associated with Bloch-band topological features. In this work, we report robust AHE and Lifshitz transition in high-quality Weyl semimetal Mn3Ge thin film, comprising stacked Kagome lattice and chiral antiferromagnetism. We successfully achieved giant AHE in our Mn3Ge film, with a strong Berry curvature enhanced by the Weyl phase. The enormous coercive field HC in our AHE curve at 5 K reached an unprecedented 5.3 T among hexagonal Mn3X systems. Our results provide direct experimental evidence of an electronic topological transition in the chiral AFMs. The temperature was demonstrated to play an efficient role in tuning the carrier concentration, which could be quantitatively determined by the two-band model. The electronic band structure crosses the Fermi energy level and leads to the reversal of carrier type around 50 K. The results not only offer new functionality for effectively modulating the Fermi level location in topological Weyl semimetals but also present a promising route of manipulating the carrier concentration in antiferromagnetic spintronic devices.
中文翻译：
Weyl半金属Mn3Ge中的鲁棒异常霍尔效应和温度驱动的Lifshitz跃迁
拓扑Weyl半金属引起了人们极大的兴趣，因为它们在自旋电子学中表现出潜在的物理和设备潜力。非共线反铁磁体（AFM）中的大异常霍尔效应（AHE）表示醒目的Weyl相，其与Bloch带拓扑特征相关。在这项工作中，我们报告了高质量的Weyl半金属Mn 3 Ge薄膜具有强大的AHE和Lifshitz跃迁，该薄膜包括堆叠的Kagome晶格和手性反铁磁性。我们成功地在Mn 3 Ge薄膜中实现了巨大的AHE，并且由于Weyl相增强了Berry曲率。六角形Mn 3中在5 K时AHE曲线中巨大的矫顽场H C达到了前所未有的5.3 TX系统。我们的结果提供了手性原子力显微镜中电子拓扑转变的直接实验证据。事实证明，温度在调节载流子浓度中起着有效的作用，这可以通过两波段模型定量确定。电子能带结构越过费米能级并导致50 K左右的载流子类型反转。结果不仅提供了有效调节拓扑Weyl半金属中费米能级位置的新功能，而且提供了一种有前途的操纵载流子浓度的途径在反铁磁自旋电子器件中。
更新日期：2021-01-22
中文翻译：
Weyl半金属Mn3Ge中的鲁棒异常霍尔效应和温度驱动的Lifshitz跃迁
拓扑Weyl半金属引起了人们极大的兴趣，因为它们在自旋电子学中表现出潜在的物理和设备潜力。非共线反铁磁体（AFM）中的大异常霍尔效应（AHE）表示醒目的Weyl相，其与Bloch带拓扑特征相关。在这项工作中，我们报告了高质量的Weyl半金属Mn 3 Ge薄膜具有强大的AHE和Lifshitz跃迁，该薄膜包括堆叠的Kagome晶格和手性反铁磁性。我们成功地在Mn 3 Ge薄膜中实现了巨大的AHE，并且由于Weyl相增强了Berry曲率。六角形Mn 3中在5 K时AHE曲线中巨大的矫顽场H C达到了前所未有的5.3 TX系统。我们的结果提供了手性原子力显微镜中电子拓扑转变的直接实验证据。事实证明，温度在调节载流子浓度中起着有效的作用，这可以通过两波段模型定量确定。电子能带结构越过费米能级并导致50 K左右的载流子类型反转。结果不仅提供了有效调节拓扑Weyl半金属中费米能级位置的新功能，而且提供了一种有前途的操纵载流子浓度的途径在反铁磁自旋电子器件中。
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