Clamp mode resistor capacitor diode (CMRCD) snubbers have a simple and easy implementing structure. They have been widely adopted in the pulsed power supplies to provide a safe operating condition for the series insulated gate bipolar transistors (IGBTs). The main problem of the CMRCD snubbers is their poor performance in the voltage balancing of the series IGBTs. They are essentially overvoltage protectors and clamp the voltage of the IGBTs in a probable potentially dangerous condition. This issue diminishes the expected lifetime of the series IGBTs, where a number of them face a higher level of the voltage than that of the others. The unbalanced voltage of the series IGBTs will result in a lower value of the expected lifetime of the series IGBTs. For improving the expected lifetime of the series IGBTs a CMRCD snubber with balanced voltage sharing for the series IGBTs is proposed. Adopting this proposal will lead to the balanced voltage sharing of the series IGBTs, even in the blocking voltage below the nominal designed value. Consequently, the highest value of the lifetime is estimated for the series IGBTs in the stack. The simulation and experimental results truly demonstrate the effectiveness of the proposed structure.

中文翻译：

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一种串联IGBT的电压平衡方案，以增加其在脉冲负载应用中的预期寿命

钳位模式电阻器电容器二极管（CMRCD）缓冲器具有简单易用的结构。它们已被脉冲电源广泛采用，以为串联绝缘栅双极型晶体管（IGBT）提供安全的工作条件。CMRCD缓冲器的主要问题是它们在串联IGBT的电压平衡方面的性能较差。它们本质上是过压保护器，并将IGBT的电压钳位在可能的潜在危险条件下。这个问题降低了串联IGBT的预期寿命，其中许多IGBT面临的电压水平高于其他IGBT。串联IGBT的不平衡电压将导致串联IGBT预期寿命的较低值。为了提高串联IGBT的预期寿命，提出了一种具有均衡电压共享的CMRCD缓冲器，用于串联IGBT。即使在阻断电压低于标称设计值的情况下，采用该建议也将导致串联IGBT的平衡电压共享。因此，对于堆叠中的串联IGBT，可以估算出使用寿命的最高值。仿真和实验结果真实地证明了所提出结构的有效性。