Simulation has been performed on fully lead-free inorganic cesium germanium tri-iodide (CsGeI3) perovskite solar cell heterostructure and achieved a champion power conversion efficiency (PCE) of ∼18.30% with significantly improved device parameters. The influence of thickness of an electron transport layer, a hole transport layer, an absorber, defect density, doping concentration, electron affinity, temperature, and series resistance issued for the optimization of the lead-free device is studied. It is confirmed via the scaps simulation results that this device is perfectly optimized with the experimental results and demonstrates the maximum possible improved power conversion efficiency in a fully inorganic lead-free CsGeI3 perovskite solar cell device. The final optimized device performance parameters are as follows: %PCE = 18.30%, %FF = 75.46%, Jsc = 23.31 mA/cm2, and Voc = 1.04 V. In the future, this efficiency may offer prominent potential as a substitute in a highly efficient green solar absorber material for photovoltaic applications after confirmation in the laboratory.

中文翻译：

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通过 scaps 模拟提高无铅 CsGeI3 钙钛矿太阳能电池异质结构的功率转换效率的证据

对完全无铅无机三碘化铯锗 (CsGeI3) 钙钛矿太阳能电池异质结构进行了模拟，并实现了约 18.30% 的功率转换效率 (PCE)，并显着改善了器件参数。研究了电子传输层、空穴传输层、吸收体的厚度、缺陷密度、掺杂浓度、电子亲和势、温度和串联电阻对无铅器件优化的影响。通过 scaps 模拟结果证实，该器件与实验结果完美匹配，并在完全无机的无铅 CsGeI3 钙钛矿太阳能电池器件中展示了最大可能的提高的功率转换效率。最终优化的器件性能参数如下：%PCE=18.30%，%FF=75.46%，