The high suitability of hydrogen silsesquioxane (HSQ) as e-beam resist has long been known. Despite its undoubtedly good and reliable properties, HSQ nevertheless proves to be problematic in certain aspects due to its relatively short shelf-life and the small processing window between coating preparation and exposure. We thus intended to optimize the silsesquioxane with respect to a prolonged shelf-life and larger processing window while retaining all advantages like the high silicon content for high etch resistance and high pattern resolution. Our combined knowledge resulted in the development of the hydrogen silsesquioxane-based e-beam resist Medusa 82 with improved characteristics. Medusa 82 can be processed with HSQ standard procedures but allows for a delay of several weeks between layer preparation and exposure under standard conditions. Medusa 82 resist compositions tolerate storage periods of several weeks at room temperature. In addition, we generated and investigated variants of Medusa 82, which offer the possibility for exposure with less energy to cross-link the resist. Furthermore, weaker alkaline developers can be applied. A postexposure bake of these new Medusa 82 variants provides a significant enhancement of sensitivity and contrast. In this context, applications of Medusa 82 in deep to extreme ultraviolet and grayscale lithography are described. The use of glasslike resists with moderate electron beam sensitivity has the potential to reduce the effort and to simplify the manufacturing process of micro-optical devices that traditionally have to be structured in glass surfaces. The transformation process of Medusa 82 into a glasslike material involves an e-beam exposure, a thermal treatment, or a combination of both. Moreover, the adjustable contrast and sensitivity enable grayscale lithography. Different e-beam exposures trigger a different cross-linking degree within the layer, resulting in height variations after development. A postexposure bake step induces further cross-linking and a complete conversion into silicon oxide.

中文翻译：

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Medusa 82—基于氢倍半硅氧烷的高灵敏度负型抗蚀剂，具有长的保存期限和灰度光刻能力

长期以来，人们已经知道氢倍半硅氧烷（HSQ）作为电子束抗蚀剂的高度适用性。尽管HSQ无疑具有良好和可靠的性能，但由于其相对较短的保质期以及涂层制备和曝光之间的加工窗口小，在某些方面仍然存在问题。因此，我们打算在延长货架寿命和扩大加工范围方面优化倍半硅氧烷，同时保留所有优势，例如高硅含量，高抗蚀刻性和高图案分辨率。我们的综合知识导致开发了具有改进特性的基于氢倍半硅氧烷的氢电子束抗蚀剂Medusa 82。Medusa 82可以使用HSQ标准程序进行处理，但是在标准条件下，从层制备到曝光之间需要延迟数周。Medusa 82抗蚀剂组合物在室温下可耐受数周的储存时间。此外，我们生成并研究了Medusa 82的变体，它们提供了以更少的能量进行曝光以使抗蚀剂交联的可能性。此外，可以使用较弱的碱性显影剂。这些新的Medusa 82变型的曝光后烘烤可显着提高感光度和对比度。在此背景下，描述了Medusa 82在深紫外光和灰度光刻中的应用。具有中等电子束敏感性的类玻璃抗蚀剂的使用具有减少工作量并简化传统上必须在玻璃表面上构造的微光学器件的制造工艺的潜力。美杜莎82转变为玻璃状材料的过程涉及电子束曝光，热处理，或两者结合。此外，可调节的对比度和灵敏度使灰度光刻成为可能。不同的电子束曝光会触发层内不同的交联度，从而导致显影后的高度变化。曝光后烘烤步骤引起进一步的交联并完全转化为氧化硅。